TITLE

Photoluminescence and photoreflectance of GaInNAs single quantum wells

AUTHOR(S)
Shirakata, Sho; Kondow, Masahiko; Kitatani, Takeshi
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/2/2001, Vol. 79 Issue 1, p54
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The temperature dependence of photoluminescence (PL) and photoreflectance (PR) was studied on a 10 nm GaInNAs/GaAs single quantum well prepared by molecular-beam epitaxy using a solid As source. PL was dominated by the near-band edge PL peak with a full width at half maximum (FWHM) value of 16-28 meV for 50-280 K. This indicates that the GaInNAs epilayer was of good quality. The temperature dependence of the band gap energy was studied by the PR measurements, and the dependence was comparable to that of the GaInAs. The near-band edge PL at low temperature exhibited a blueshift with an increase in excitation intensity and temperature (8-50 K). It had a large FWHM value of 24-26 meV at 8 K. These results are discussed in terms of carrier localization. © 2001 American Institute of Physics.
ACCESSION #
4710054

 

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