Effective mass of two-dimensional electron gas in an Al[sub 0.2]Ga[sub 0.8]N/GaN heterojunction

Hang, D. R.; Liang, C.-T.; Huang, C. F.; Chang, Y. H.; Chen, Y. F.; Jiang, H. X.; Lin, J. Y.
July 2001
Applied Physics Letters;7/2/2001, Vol. 79 Issue 1, p66
Academic Journal
We have performed a magnetotransport study on an AlGaN/GaN heterostructure at low temperatures. The effective-mass values have been evaluated by analyzing the exact form of the temperature-dependent Shubnikov-de Haas oscillation function. The values obtained increase with the magnetic field. This mass enhancement is attributed to conduction-band nonparabolicity. The effective-mass variation with the magnetic field was extrapolated to zero field, together with further correction due to the triangular confinement of the carriers, yielding an effective mass of 0.185±0.005 of the free-electron mass. Our result is in excellent agreement with the results obtained by first-principle calculations and the tight-binding method, and suggest the significance of magnetic-field-induced nonparabolicity in transport measurements. © 2001 American Institute of Physics.


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