Anomalously high thermoelectric figure of merit in Bi[sub 1-x]Sb[sub x] nanowires by carrier pocket alignment

Rabina, Oded; Lin, Yu-Ming; Dresselhaus, Mildred S.
July 2001
Applied Physics Letters;7/2/2001, Vol. 79 Issue 1, p81
Academic Journal
Electronic transport calculations were carried out for Bi[sub 1-x]Sb[sub x] nanowires (0≤x≤0.30) of diameters 10 nm≤d[sub W]≤100 nm at 77 K. A band structure phase diagram was generated, showing the dependence of the relative band edge positions on diameter and composition. Calculations of the thermoelectric figure-of-merit (ZT) predict that the performance of Bi[sub 1-x]Sb[sub x] nanowires is superior to that of Bi nanowires and to that of the bulk alloy. An exceptionally high value of ZT for p-type nanowires at 77 K was found for d[sub W]∼40 nm and x∼0.13, which is explained by the coalescence in energy of up to ten valence subband edges to maximize the density-of-states at the Fermi energy. © 2001 American Institute of Physics.


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