Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates

Ravash, Roghaiyeh; Bl&äsing, Jürgen; Hempel, Thomas; Noltemeyer, Martin; Dadgar, Armin; Christen, Jürgen; Krost, Alois
December 2009
Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p242101
Academic Journal
We present metal organic vapor phase epitaxy growth of polarization reduced, wurtzitic gallium nitride layers with an 18° inclination of the c-axis to the surface normal on planar Si(211) substrates. The growth of this layer is performed as c-axis oriented growth on the naturally occurring Si(111) planes of the Si(211) substrate. Cathodoluminescence measurements on a ∼1.2 μm thick structure reveals that it has a low concentration of basal plane stacking faults and no prismatic stacking fault luminescence.


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