TITLE

Liquid Ge2Sb2Te5 studied by extended x-ray absorption

AUTHOR(S)
Kolobov, A. V.; Fons, P.; Krbal, M.; Simpson, R. E.; Hosokawa, S.; Uruga, T.; Tanida, H.; Tominaga, J.
PUB. DATE
December 2009
SOURCE
Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p241902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on x-ray absorption studies of the structure of the liquid phase of a prototypical phase-change material Ge2Sb2Te5. We demonstrate that the local structure of liquid Ge2Sb2Te5 is very similar to that of amorphous Ge2Sb2Te5. Ge atoms in the liquid phase are found to be covalently bonded suggesting a semiconducting nature of the melt.
ACCESSION #
47039189

 

Related Articles

  • The origin of the resistance change in GeSbTe films. Jang, Moon Hyung; Park, Seung Jong; Park, Sung Jin; Cho, Mann-Ho; Kurmaev, E. Z.; Finkelstein, L. D.; Chang, Gap Soo // Applied Physics Letters;10/11/2010, Vol. 97 Issue 15, p152113 

    Amorphous Ge2Sb2Te5 (a-GST) films were deposited by ion beam sputtering deposition. Extended x-ray absorption fine structure (EXAFS) data confirmed the existence of the Ge-Ge homopolar bonds in the films. Raman spectra also indicated that the Ge tetrahedral coordination in the a-GST film...

  • Formation Mechanism of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence X-Ray Absorption Fine Structure. Yan, Wensheng; Li, Zhongrui; Sun, Zhihu; Kolobov, A. V.; Wei, Shiqiang // AIP Conference Proceedings;2007, Vol. 882 Issue 1, p802 

    The formation mechanism of Ge nanocrystals for Ge (60 mol%) embedded in a SiO2 matrix grown on Si(001) and quartz-glass substrates was studied by fluorescence x-ray absorption fine structure (XAFS). It was found that the formation of Ge nanocrystals strongly depends on the properties of the...

  • ReflEXAFS technique: a powerful tool for structural study in new materials. Davoli, Ivan; Thanh, Hoang Ngoc; d’Acapito, Francesco // AIP Conference Proceedings;2003, Vol. 652 Issue 1, p388 

    We report the use of X-rays absorption technique, detected in total reflection mode, to obtain structural information on new materials. After a brief description of the ReflEXAFS technique, we present the results obtained in the study of two very peculiar solid-state problem: a) the effect of...

  • EXAFS Study of Semimetal-Semiconductor Transition of Bismuth Clusters. Ikemoto, H.; Miyanaga, T.; Yoshida, S.; Sogoh, J. // AIP Conference Proceedings;2007, Vol. 882 Issue 1, p437 

    Extended X-ray absorption fine structure (EXAFS) measurements of bismuth clusters in the temperature range of 23 –300 K have been performed using synchrotron radiation in order to investigate the size dependent phase transition. The inter-atomic distances around 3.0 Å and 3.6 Å...

  • EXAFS and thermal expansion. Dalba, G.; Fornasini, P.; Grisenti, R.; Rocca, F. // AIP Conference Proceedings;2000, Vol. 514 Issue 1, p148 

    The sensitivity of EXAFS to thermal expansion has been experimentally studied on several crystals: Ge, CdSe, and AgI. In no case does the first cumulant reproduce the thermal expansion, owing to relative atomic vibrations normal to the bond. By converse, EXAFS can give original information on...

  • Extended x-ray-absorption fine-structure study of InAs/InP and GaAs/InP strained heterostructures. Proietti, M. G.; Turchini, S.; Martelli, F.; Garcia, J.; Prosperi, T. // Journal of Applied Physics;1/1/1995, Vol. 77 Issue 1, p62 

    Presents an extended X-ray absorption fine-structure (EXAFS) study of InAs/InP and GaAs/InP strained heterostructures. Importance of having a good control of semiconductor interfaces and the knowledge of their formation processes; Functionality of EXAFS; Details of the experimental techniques...

  • X-ray induced photoemission of a localized electron and its application to site-selective x-ray absorption fine structure measurement. Ishii[a], Masashi; Yoshino, Yoko; Takarabe, Ken-ichi; Shimomura, Osamu // Journal of Applied Physics;10/1/2000, Vol. 88 Issue 7, p3962 

    Proposes the capacitance site-selective x-ray absorption fine structure (XAFS) method for local structure analyses of carrier trap centers in semiconductors. Concept of the capacitance XAFS method; Characteristics of x-ray induced photoemission from defects.

  • High-temperature annealings of Sb and Sb/B heavily implanted silicon wafers studied by near grazing incidence fluorescence extended x-ray absorption fine structure. Revenant-Brizard, C.; Regnard, J. R.; Solmi, S.; Armigliato, A.; Valmorri, S.; Cellini, C.; Romanato, F. // Journal of Applied Physics;6/15/1996, Vol. 79 Issue 12, p9037 

    Focuses on a study on the local atomic environment of the antimony dopant in silicon wafers by near grazing incidence fluorescence extended x-ray absorption fine structure (EXAFS). Periods of high temperature performed for annealing; Effects of the antimony diffusion; Structural parameters...

  • Comparative Studies Using EXAFS and PAC of Lattice Damage in Semiconductors. Byrne, A. P.; Ridgway, M. C.; Glover, C. J.; Bezakova, E. // Hyperfine Interactions;2004, Vol. 158 Issue 1-4, p245 

    We have used the perturbed angular correlation (PAC) method and extended X-ray absorption fine structure spectroscopy (EXAFS), along with microscopic methods to investigate the implantation induced disorder and characterize the ion-induced amorphisation of elemental and compound semiconductors.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics