TITLE

Zero field spin splitting in AlSb/InAs/AlSb quantum wells induced by surface proximity effects

AUTHOR(S)
Nishioka, Masaya; Gurney, Bruce A.; Marinero, Ernesto E.; Mireles, Francisco
PUB. DATE
December 2009
SOURCE
Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p242108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InAs quantum well heterostructures are of considerable interest for mesoscopic device applications such as scanning probe and magnetic recording sensors, which require the channel to be close to the surface. Here we report on magnetotransport measurements of AlSb/InAs/AlSb Hall bars at a shallow depth of 20 nm. Analysis of the observed Shubnikov-de Haas oscillations and modeling show that spin splitting energies in excess of 2.3 meV occur at zero magnetic field. We conclude that the spin-splitting results from the Rashba effect due to the band bending in the quantum well. This is caused by substantial electron transfer from the surface to the quantum well and becomes significant when the quantum well is located near the surface.
ACCESSION #
47039186

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics