Compact silicon double and triple dots realized with only two gates

Pierre, M.; Wacquez, R.; Roche, B.; Jehl, X.; Sanquer, M.; Vinet, M.; Prati, E.; Belli, M.; Fanciulli, M.
December 2009
Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p242107
Academic Journal
We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The main characteristics of the triple dot stability diagram are quantitatively fitted.


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