Effect of annealing on atomic ordering of amorphous ZrTaTiNbSi alloy

Yang, Tsung-Han; Huang, Rong-Tang; Wu, Cheng-An; Chen, Fu-Rong; Gan, Jon-Yiew; Yeh, Jien-Wei; Narayan, Jagdish
December 2009
Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p241905
Academic Journal
In this letter, we have reported on initial stages of atomic ordering in ZrTaTiNbSi amorphous films during annealing. The atomic ordering and structure evolution were studied in Zr17Ta16Ti19Nb22Si26 amorphous films as a function of annealing temperature in the temperature range from 473 to 1173 K. Up to annealing temperature of 1173 K, the films retained amorphous structure, but the degree of disorder is increased with the increase in temperature. The formation of Si–M covalent bonds, which contributed to the local atomic arrangement, occurred in the initial stages of ordering. The bonding reactions between Si and other metal species explain the anomalous structural changes which were observed in x-ray diffraction and transmission electron microscopy. We discuss the stages of phase transformation for amorphous films as a function of annealing temperature. From these results, we propose that annealing leads to formation of random Si–M4 tetrahedron, and two observed rings, a first and second in the electron diffraction patterns compared to M–M and Si–M bond length, respectively.


Related Articles

  • Thermal stability of metastable silicon phases produced by nanoindentation. Daibin Ge, Koji; Domnich, Vlasidlav; Gogotsi, Yury // Journal of Applied Physics;3/1/2004, Vol. 95 Issue 5, p2725 

    Raman spectroscopy and transmission electron microscopy are used to investigate the temperature effects on the stability of metastable silicon phases (Si–III and Si–XII) produced by nanoindentation. It is found that the thickness of the specimen beneath the residual imprint plays...

  • In-situ characterization of rapid crystallization of amorphous CoFeB electrodes in CoFeB/MgO/CoFeB junctions during thermal annealing. Wang, W. G.; Jordan-sweet, J.; Miao, G. X.; Ni, C.; Rumaiz, A. K.; Shah, L. R.; Fan, X.; Parsons, P.; Stearrett, R.; Nowak, E. R.; Moodera, J. S.; Xiao, J. Q. // Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p242501 

    We report the crystallization study of CoFeB/MgO/CoFeB magnetic tunnel junctions using in-situ, time-resolved synchrotron-based x-ray diffraction and transmission electron microscopy. It was found that the crystallization of amorphous CoFeB electrodes occurs on a time scale of seconds during the...

  • Structural disorder induced in hydrogenated amorphous silicon by light soaking. Gibson, J. M.; Treacy, M. M. J.; Voyles, P. M.; Jin, H-C.; Abelson, J. R. // Applied Physics Letters;11/23/1998, Vol. 73 Issue 21 

    We show, using variable coherence transmission electron microscopy, that light soaking of amorphous hydrogenated silicon thin films leads to structural changes. We speculate that the structural changes are associated with instability in the as-deposited material. We suggest that improved...

  • Plan-view transmission electron diffraction measurement of roughness at buried Si/SiO2 interfaces. Gibson, J. M.; Lanzerotti, M. Y.; Elser, V. // Applied Physics Letters;10/2/1989, Vol. 55 Issue 14, p1394 

    We have developed a novel technique for determining interfacial roughness from plan-view transmission electron diffraction. Certain bulk forbidden Bragg reflections can occur due to crystal termination at surfaces and are very sensitive to steps on crystal boundaries. We demonstrate the...

  • Interfacial reactions in the Zr–Si system studied by in situ transmission electron microscopy. Tanaka, Hiroyuki; Konno, Toyohiko J.; Sinclair, Robert; Hirashita, Norio // Journal of Applied Physics;10/15/1995, Vol. 78 Issue 8, p4982 

    Presents information on a study which investigated the interfacial reactions in the zirconium-silicon system by in situ cross-section transmission electron microscopy including high-resolution-mode energy-dispersive spectroscopy and nanobeam electron diffraction. Methods; Results; Discussion.

  • Microstructure of sputter-deposited Co/Si multilayer thin films. Fallon[a], J. M.; Faunce, C. A.; Grundy[b], P. J. // Journal of Applied Physics;9/1/2000, Vol. 88 Issue 5, p2400 

    Presents the results of an investigation by transmission electron microscopy, electron diffraction, x-ray diffraction and x-ray reflectivity of sputter-deposited Co/Si multilayers. Retention of elemental regions in structures with individual layer thicknesses; Occurrence of significant...

  • Growth mechanism of cavities in MeV helium implanted silicon. Grisolia, J.; Claverie, A.; Assayag, G. Ben; Godey, S.; Ntsoenzok, E.; Labhom, F.; Van Veen, A. // Journal of Applied Physics;6/1/2002, Vol. 91 Issue 11, p9027 

    A study of silicon implanted with 1.55 MeV helium 3 and thermally annealed to generate a subsurface cavity region was performed using neutron depth profiling and transmission electron microscopy (TEM). Results show that about 30% of the initial implanted helium is still present in cavities even...

  • Direct evidence for 8-interstitial-controlled nucleation of extended defects in c-Si. Schiettekatte, F.; Roorda, S.; Poirier, R.; Fortin, M. O.; Chazal, S.; Héliou, R. // Applied Physics Letters;12/25/2000, Vol. 77 Issue 26 

    The areal density of extended defects in P-implanted and annealed Si is observed to increase with ion dose to the power 8. A simple model based on Poisson statistics applied to point defects created during ion implantation shows that such a dependence corresponds to enhanced stability of...

  • Mn-doped amorphous Si:H films with anomalous Hall effect up to 150 K. Yao, Jia-Hsien; Li, Shin-Chih; Lan, Ming-Der; Chin, Tsung-Shune // Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG 

    Structural, magnetic, and electrical properties were investigated of Mn-doped amorphous silicon films prepared by magnetron sputtering with and without hydrogen. Ferromagnetism at room temperature was observed and no clusters or second phases were detected from x-ray diffraction and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics