TITLE

GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier

AUTHOR(S)
Ohya, Shinobu; Muneta, Iriya; Hai, Pham Nam; Tanaka, Masaaki
PUB. DATE
December 2009
SOURCE
Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p242503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigate the spin-dependent transport of GaMnAs-based magnetic tunnel junctions (MTJs) containing a paramagnetic AlMnAs barrier with various thicknesses. The barrier height of AlMnAs with respect to the Fermi level of GaMnAs is estimated to be 110 meV. We observe tunneling magnetoresistance (TMR) ratios up to 175% (at 2.6 K), which is higher than those of the GaMnAs-based MTJs with other barrier materials in the same temperature region. These high TMR ratios can be mainly attributed to the relatively high crystal quality of AlMnAs and the suppression of the tunneling probability at the in-plane wave vector k∥∼0.
ACCESSION #
47039174

 

Related Articles

  • Mechanisms of current formation in resonant tunneling AlN/GaN heterostructures. Petrychuk, M. V.; Belyaev, A. E.; Kurakin, A. M.; Danylyuk, S. V.; Klein, N.; Vitusevich, S. A. // Applied Physics Letters;11/26/2007, Vol. 91 Issue 22, p222112 

    This paper presents an analysis of transport and noise properties of double-barrier resonant tunneling diodes formed on the basis of AlN/GaN heterostructures. Two stable states are registered in the I-V characteristics of the diodes. The temperature dependences of current and noise behavior are...

  • Quantum and transport mobilities in an AlGaAs/GaAs parabolic quantum-well structure. Yu, G.; Studenikin, S. A.; SpringThorpe, A. J.; Aers, G. C.; Austing, D. G. // Journal of Applied Physics;5/15/2005, Vol. 97 Issue 10, p10P301 

    We study quantum and transport mobilities in a parabolic quantum-well structure when one or more subbands are occupied. We developed an original analytical method to extract the quantum mobility from the multiple occupied subband transport characteristics at low temperature. We tune the carrier...

  • Liquid-phase-epitaxial growth of Ga0.96Al0.04Sb[ATOTHER]@B:[/ATOTHER] Electrical and photoelectrical characterizations. Luquet, H.; Gouskov, L.; Perotin, M.; Jean, A.; Rjeb, A.; Zarouri, T.; Bougnot, G. // Journal of Applied Physics;11/15/1986, Vol. 60 Issue 10, p3582 

    Presents a study that grew gallium-aluminum-tin layers by liquid-phase epitaxy on gallium-tin substrates. Temperature range by which the layers were grown; Temperature that will lead to the best control of the layer's quality; Factor that limits the natural p-type doping of the layers.

  • Structural properties and transport characteristics of pseudomorphic GaxIn1-xAs/AlyIn1-yAs modulation-doped heterostructures grown by molecular-beam epitaxy. Tournié, E.; Tapfer, L.; Bever, T.; Ploog, K. // Journal of Applied Physics;2/15/1992, Vol. 71 Issue 4, p1790 

    Studies the structural properties and transport characteristics of pseudomorphic gallium and aluminum compounds modulation-doped heterostructures grown by molecular-beam epitaxy. Applications of the heterostructures lattice; Sample preparation and experimental procedure; Structural...

  • Ultrafast optical response of a high-reflectivity GaAs/AlAs Bragg mirror. Hastings, Sara R.; de Dood, Michiel J. A.; Kim, Hyochul; Marshall, William; Eisenberg, Hagai S.; Bouwmeester, Dirk // Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p031109 

    The ultrafast response of a high-reflectivity GaAs/AlAs Bragg mirror to optical pumping is investigated for all-optical switching applications. Both Kerr and free carrier nonlinearities are induced with 100 fs, 780 nm pulses with a fluence of 0.64 and 0.8 kJ/m2. The absolute transmission of the...

  • Polarization-dependent beam switch based on an M-plane GaN/AlN distributed Bragg reflector. Schaadt, D. M.; Brandt, O.; Ghosh, Sandip; Flissikowski, T.; Jahn, U.; Grahn, H. T. // Applied Physics Letters;6/4/2007, Vol. 90 Issue 23, p231117 

    The authors demonstrate a two-color distributed Bragg reflector (DBR) consisting of 20 periods of alternating [formula]-oriented (M-plane) AlN and GaN layers grown on LiAlO2 by molecular-beam epitaxy. Due to the birefringent nature of GaN and AlN, the wavelength region of the stop band depends...

  • Photoluminescent and kinetic properties of A(+) centers in quantum well. Romanov, K. S.; Agrinskaja, N. V.; Averkiev, N. S.; Ivanov, Yu. L.; Petrov, P. V.; Ustinov, V. M. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p955 

    Theoretical and experimental studies of photoluminescence and hopping conductivity of A(+) centers in GaAs/AlGaAs based quantum well (QW) samples were performed. The binding energy of hole localized at A(+) center in the QW as a function of the width of the QW was calculated. The comparison of...

  • Insights into electroluminescent emission from AlGaN/GaN field effect transistors using micro-Raman thermal analysis. Pomeroy, J. W.; Kuball, M.; Uren, M. J.; Hilton, K. P.; Balmer, R. S.; Martin, T. // Applied Physics Letters;1/9/2006, Vol. 88 Issue 2, p023507 

    We present an analysis of AlGaN/GaN heterostructure field effect transistor’s electric field and current distributions by electroluminescent emission and micro-Raman thermal analysis techniques. Raman and electroluminescence are complementary since they probe lattice and electron energy...

  • Magnetoresistance in tunnel junctions using Co2(Cr,Fe)Al full Heusler alloys. Inomata, K.; Tezuka, N.; Okamura, S.; Kurebayashi, H.; Hirohata, A. // Journal of Applied Physics;6/1/2004, Vol. 95 Issue 11, p7234 

    We grew Co2(Cr1-xFex)Al Heusler alloy films using a magnetron sputtering system on thermally oxidized Si substrates at room temperature without any buffer layers. The x-ray diffraction patterns did not show the L21 structure as expected for the bulk but revealed the B2 and A2 structures,...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics