TITLE

Low-voltage high-performance organic thin film transistors with a thermally annealed polystyrene/hafnium oxide dielectric

AUTHOR(S)
Ying Wang; Acton, Orb; Ting, Guy; Weidner, Tobias; Hong Ma; Castner, David G.; Jen, Alex K.-Y.
PUB. DATE
December 2009
SOURCE
Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p243302
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low-voltage pentacene-based organic thin film transistors (OTFTs) are demonstrated with polystyrene (PS)/hafnium oxide (HfOx) hybrid dielectrics. Thermal annealing of PS films on HfOx at 120 °C (PS-120) induces a flatter orientation of the phenyl groups (tilt angle 65°) at the surface compared to PS films without annealing (PS-RT) (tilt angle 31°). The flatter phenyl group orientation leads to better matching of surface energy between pentacene and PS. Pentacene deposited on PS-120 display higher quality thin films with larger grain sizes and higher crystallinity. Pentacene OTFTs with PS-120/HfOx hybrid dielectrics can operate at low-voltage (<3 V) with high field-effect mobilities (1 cm2/V s), high on/off current ratios (106), and low subthreshold slopes (100 mV/dec).
ACCESSION #
47039172

 

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