Excess carrier recombination lifetime of bulk n-type 3C-SiC

Grivickas, Vytautas; Manolis, Georgios; Gulbinas, Karolis; Kęstutis Jarašiūnas; Kato, Masashi
December 2009
Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p242110
Academic Journal
Transient absorption technique was used to determine carrier lifetimes in 3C-SiC grown on Si and 6H-SiC substrates. A slow lifetime component originated from minority carrier traps and pointed out to the trap saturation with increasing injection. Recombination lifetime in different samples varied between 0.5–120 ns. Its value decreased with excess carrier density in the transition range between minority-carrier-lifetime and high-injection lifetime but abnormally increased above the carrier density of 2×1017 cm-3. Negligible contribution of surface and Auger recombination to recombination lifetime peculiarities was observed. Possible mechanisms of the observed lifetime variation are discussed.


Related Articles

  • Hydrogen bonding in liquid water probed by resonant Auger-electron spectroscopy. Winter, Bernd; Hergenhahn, Uwe; Faubel, Manfred; Björneholm, Olle; Hertel, Ingolf V. // Journal of Chemical Physics;9/7/2007, Vol. 127 Issue 9, p094501 

    We have measured resonant and off-resonant Auger-electron spectra of liquid water. Continuumlike transitions near and above the O1s vertical ionization energy are identified by the characteristic normal Auger-electron spectra. On the contrary, well-resolved spectator shifts of the main...

  • Excitation rate dependence of Auger recombination in silicon. Hopkins, Patrick E.; Barnat, Edward V.; Cruz-Campa, Jose L.; Grubbs, Robert K.; Okandan, Murat; Nielson, Gregory N. // Journal of Applied Physics;Mar2010, Vol. 107 Issue 5, p053713-1 

    This work reports on measurements of the Auger recombination coefficients in silicon wafers with pump-probe thermoreflectance techniques operating at two different excitation rates: 250 kHz (low repetition rate) and 80 MHz (high repetition rate). The different excitation frequencies give rise to...

  • Formation of organic films on the indium arsenide surface. Komolov, S.; Aliaev, Y.; Buzin, I. // Technical Physics;Feb2007, Vol. 52 Issue 2, p235 

    The formation of interfaces between the single-crystalline InAs(001) surface and organic semiconductor molecules (PTCDA and NTCDA) is investigated. With the methods of total current spectroscopy and Auger electron spectroscopy, it is found that indium atoms diffuse from the substrate into the...

  • H2S ultrafast dissociation probed by energy-selected resonant Auger electron–ion coincidence measurements. Le Guen, K.; Miron, C.; Céolin, D.; Guillemin, R.; Leclercq, N.; Simon, M.; Morin, P.; Mocellin, A.; Björneholm, O.; Naves de Brito, A.; Sorensen, S. L. // Journal of Chemical Physics;9/21/2007, Vol. 127 Issue 11, p114315 

    We have studied the ultrafast dissociation of the H2S molecule upon S 2p3/2→6a1 inner-shell excitation by combining high-resolution resonant Auger spectroscopy and energy-selected Auger electron–ion coincidence measurements. Auger final states have been correlated to the different...

  • Morphology of graphene on [formula] surfaces. Fisher, P. J.; Srivastava, N.; Feenstra, R. M.; Yugang Sun; Kedzierski, J.; Healey, P.; Gong Gu // Applied Physics Letters;8/17/2009, Vol. 95 Issue 7, p073101 

    Graphene is formed on [formula] surfaces (the so-called C-face of the crystal) by annealing in vacuum, with the resulting films characterized by atomic force microscopy, Auger electron spectroscopy, scanning Auger microscopy, and Raman spectroscopy. Morphology of these films is compared with the...

  • Improved calculation of the backscattering factor for quantitative analysis by Auger electron spectroscopy. Ding, Z. J.; Tan, W. S.; Li, Y. G. // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p084903 

    Based on a Monte Carlo simulation method, an improved calculation of the backscattering factor in quantitative analysis by Auger electron spectroscopy has been performed by integrating several aspects of recent progresses in the related fields. The calculation used a general definition of...

  • Sulfur incorporation into copper indium diselenide single crystals through annealing in hydrogen sulfide. Titus, Jochen; Birkmire, Robert W.; Hack, Christina; Müller, Georg; McKeown, Patrick // Journal of Applied Physics;2/15/2006, Vol. 99 Issue 4, p043502 

    CuInSe2 crystals were sulfurized in a H2S–Ar gas mixture at 575 °C. The focus was on the resulting mass transport, in particular, on the interdiffusion of Se and S. Experiments were done for various sulfurization times, and the resulting S distribution was measured by Auger electron...

  • Temperature Dependence of Epitaxial Graphene Formation on SiC(0001). Luxmi; Nie, Shu; Fisher, P. J.; Feenstra, R. M.; Gu, Gong; Sun, Yugang // Journal of Electronic Materials;Jun2009, Vol. 38 Issue 6, p718 

    The formation of epitaxial graphene on SiC(0001) surfaces is studied using atomic force microscopy, Auger electron spectroscopy, electron diffraction, Raman spectroscopy, and electrical measurements. Starting from hydrogen-annealed surfaces, graphene formation by vacuum annealing is observed to...

  • Postcollision interaction in noble gas clusters: Observation of differences in surface and bulk line shapes. Lindblad, A.; Fink, R. F.; Bergersen, H.; Lundwall, M.; Rander, T.; Feifel, R.; Öhrwall, G.; Tchaplyguine, M.; Hergenhahn, U.; Svensson, S.; Björneholm, O. // Journal of Chemical Physics;12/1/2005, Vol. 123 Issue 21, p211101 

    The surface and bulk components of the x-ray photoelectron spectra of free noble gas clusters are shown to display differences in the influence of postcollision interaction between the photoelectron and the Auger electron on the spectral line shape; the bulk component is observed to be less...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics