Photoluminescence induced by thermal annealing in SrTiO3 thin film

Rho, JaeHoon; Jang, SeungHun; Ko, Young Dong; Kang, SeungJin; Kim, Dong-Wook; Chung, J.-S.; Kim, Miyoung; Han, Moonsup; Choi, Eunjip
December 2009
Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p241906
Academic Journal
We have grown SrTiO3 thin films by rf-sputtering and studied its photoluminescence (PL) property after postannealing treatments. While the as-grown film does not show any PL signal, visible frequency PL emissions are induced by high temperature (T>550 °C) annealing. When subsequent low-T (50 °C) and long term (>8 months) annealing was made, the PL-spectra evolved into another pattern in which four distinct luminescence peaks appear simultaneously at λ=1.8, 2.2, 2.7, and 3.1 eV. We propose that these remarkable room temperature PL effects are due to both metastable and energetically stabilized defect states formed inside the band gap.


Related Articles

  • Investigation on the diffusion barrier properties of sputtered Mo/W–N thin films in Cu interconnects. Majumder, Prodyut; Takoudis, Christos G. // Applied Physics Letters;10/15/2007, Vol. 91 Issue 16, p162108 

    Mo/W–N bilayer thin film structures deposited on Si using sputtering have been studied as a copper diffusion barrier. The thermal stability of the barrier structure after annealing Cu/Mo/W–N/ samples in N2 for 5 min is studied using x-ray diffraction (XRD), scanning electron...

  • Effect of annealing on magnetotransport and structural properties of Co/Cu multilayers with Ta buffer layer. Mohanan, Senthilnathan; Grob, Andreas; Herr, Ulrich // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08T102 

    The main aim of this study is to investigate the effect of annealing on magnetotransport and on structural properties of Co/Cu multilayer with Ta buffer layer, prepared by dc magnetron sputtering. The heat treatment of the sample at 250 °C up to 20 h induced a prominent change in giant...

  • Effects of passivating ionic films on the photoluminescence properties of GaAs. Skromme, B. J.; Sandroff, C. J.; Yablonovitch, E.; Gmitter, T. // Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p2022 

    The passivating effects of spin-coated films of Na2S·9H2O on GaAs surfaces have been studied using room-temperature photoluminescence (PL) and low-temperature PL spectroscopy. After passivation, the 300 K PL efficiency is increased on both n- and p-type material; improvements of up to...

  • Investigation of thermal effect on electrical properties of Si0.887Ge0.113 and Si0.887-yGe0.113Cy films. Feng, W.; Choi, W. K. // Journal of Applied Physics;4/15/2004, Vol. 95 Issue 8, p4197 

    Thermal effects on the bulk and interface electrical properties of Si0.887Ge0.113 and Si0.887-yGe0.113Cy films annealed at an oxidizing or inert ambient were investigated. We found that while annealing the Si0.887-yGe0.113Cy films at an oxidizing ambient reduced the C content significantly, a...

  • Microphotoluminescence spectra of hillocks in Al0.11Ga0.89N films. Ke, W. C.; Ku, C. S.; Huang, H. Y.; Chen, W. C.; Lee, L.; Chen, W. K.; Chou, W. C.; Chen, W. H.; Lee, M. C.; Lin, W. J.; Cheng, Y. C.; Cherng, Y. T. // Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3047 

    The spatial variation of the optical properties of hillocks in Al0.11Ga0.89N films has been studied by using microphotoluminescence (μ-PL) microscopy. The μ-PL spectrum revealed a strong emission (IH) at 351 nm from the hillock, besides the near-band-edge emission (Inbe) at 341 nm....

  • Influence of silicon doping on vacancies and optical properties of AlxGa1-xN thin films. Slotte, J.; Tuomisto, F.; Saarinen, K.; Moe, C. G.; Keller, S.; DenBaars, S. P. // Applied Physics Letters;4/9/2007, Vol. 90 Issue 15, p151908 

    The authors have used positron annihilation spectroscopy and photoluminescence measurements to study the influence of silicon doping on vacancy formation in AlGaN:Si structures. The results show a correlation between the Doppler broadening measurements and the intensity from 510 nm...

  • Effect of Annealing on the Optical Properties of AgGa0.5In0.5Te2 Thin Film. Sakr, G. B.; El-Sayad, E. A. // Egyptian Journal of Solids;2009, Vol. 32 Issue 1, p9 

    AgGa0.5In0.5Te2 thin films were deposited, by thermal evaporation of presynthesised bulk ingot material, onto a Corning 7095 glass substrates. EDXS studies on the prepared films show that the as-deposited films are nearly stoichiometric. Also, XRD studies on the as-deposited and annealed films...

  • Spectroscopic Ellipsometry Characterization of High-k films on SiO2/Si. Ming Di; Bersch, Eric; Consiglio, Steven; Tianhao Zhang; Tyagi, Parul; Clark, Robert D.; Leusink, Gert J.; Srivatsa, Arun; Diebold, Alain C. // AIP Conference Proceedings;9/28/2009, Vol. 1173 Issue 1, p104 

    Spectroscopic ellipsometry (SE) with VUV wavelength region has been used to characterize high-k films grown on SiO2/Si. The high-k stack thickness measurements by SE are compared to thickness measurements derived from angle resolved x-ray photoemission spectroscopy. The optical properties of...

  • Crystal structure of sputter-synthesized CoNx thin films. Matsuoka, Morito; Ono, Ken’ichi // Applied Physics Letters;12/15/1986, Vol. 49 Issue 24, p1644 

    This letter discusses the synthesis of CoNx films using rf diode reactive sputtering. It describes the properties of crystal structures in CoNx thin films and in particular, the post-annealing effects on the crystal structures of CoNx. The CoNx films have the crystal structures of ε-Co(hcp),...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics