Effects of nanowire coalescence on their structural and optical properties on a local scale

Consonni, V.; Knelangen, M.; Jahn, U.; Trampert, A.; Geelhaar, L.; Riechert, H.
December 2009
Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p241910
Academic Journal
The effects of GaN nanowire coalescence have been investigated on a local scale by combining high-resolution transmission electron microscopy imaging with spatially resolved cathodoluminescence measurements. Coalescence induces the formation of a network of boundary dislocations, above which I1-type basal-plane stacking faults are nucleated. The former contributes to the reduction in the crystalline quality at the bottom of coalesced nanowires while the latter leads to intense excitonic radiative transitions at 3.42 eV in their center. Despite coalescence, the top of coalesced nanowires presents a very high crystalline quality, resulting in strong radiative recombinations of donor bound excitons at 3.47 eV.


Related Articles

  • Optical and structural studies of homoepitaxially grown m-plane GaN. Khromov, S.; Monemar, B.; Avrutin, V.; Li, Xing; Morkoç, H.; Hultman, L.; Pozina, G. // Applied Physics Letters;4/23/2012, Vol. 100 Issue 17, p172108 

    Cathodoluminescence (CL) and transmission electron microscopy studies of homoepitaxially grown m-plane Mg-doped GaN layers are reported. Layers contain basal plane and prismatic stacking faults (SFs) with ∼106 cm-1 density. Broad emission peaks commonly ascribed to SFs were found to be...

  • Excitonic origin of enhanced luminescence quantum efficiency in MgZnO/ZnO coaxial nanowire heterostructures. Yoo, Jinkyoung; Chon, Bonghwan; Tang, Wei; Joo, Taiha; Dang, Le Si; Yi, Gyu-Chul // Applied Physics Letters;5/28/2012, Vol. 100 Issue 22, p223103 

    The effect of exciton transport on luminescence efficiency was investigated by time-resolved photoluminescence and spatially resolved cathodoluminescence spectroscopy. The internal quantum efficiency of ZnO nanowire (NW) increased from 45% to 56% due to formation of a MgZnO/ZnO coaxial NW...

  • IR Resonant Absorption in Molecular Nanofilms. Pelemiš, S. S.; Šetrajčić, J. P.; Markoski, B.; Delić, N. V.; Vučenović, S. M.; Mirjanić, D. Lj. // Acta Physica Polonica, A.;Oct2009, Vol. 116 Issue 4, p579 

    The paper presents a theoretical research of changes of optical properties of various nanofilm molecular crystals which are caused by the presence of two parallel and close borders. We used combined analytical-numerical calculation to find the allowed energy states of excitons and their spatial...

  • Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires. Li, Qiming; Wang, George T. // Applied Physics Letters;11/1/2010, Vol. 97 Issue 18, p181107 

    The optical properties, indium concentration and distribution, defect morphology, and strain distribution of GaN/InGaN coaxial nanowires grown by metal organic chemical vapor deposition were investigated using spatially resolved cathodoluminescence, scanning transmission electron microscopy, and...

  • Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires. Nogues, Gilles; Auzelle, Thomas; Hertog, Martien Den; Gayral, Bruno; Daudin, Bruno // Applied Physics Letters;3/10/2014, Vol. 104 Issue 10, p1 

    We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning transmission electron microscopy. We show that some nanowires exhibit well localized regions emitting light at the...

  • Cathodoluminescence of p�n�p microstructures in CuInSe[sub 2] crystals. Konnikov, S. G.; Medvedkin, G. A.; Sobolev, M. M.; Solov�ev, S. A. // Semiconductors;Jan1997, Vol. 31 Issue 1, p92 

    Microstructures in p�CuInSe[sub 2] single crystals tailored by the strong electric field have been studied using the method of local (d?1 �m) cathodoluminescence (CL). The shortest-wavelength radiation (h?=1.023 eV) has been observed from the n-type layer and longer-wavelength...

  • Self-Formed Ti-Rich Barrier Layers in Cu(Ti)/Low-k Samples. Ito, Kazuhiro; Kohama, Kazuyuki; Mori, Kenichi; Maekawa, Kazuyoshi; Murakami, Masanori // AIP Conference Proceedings;6/18/2009, Vol. 1143 Issue 1, p118 

    Thin Ti-rich diffusion barrier layers were found to be formed at the interface between Cu(Ti) films and SiO2/Si substrates after annealing at elevated temperatures. This technique was called “self-formation of the diffusion barrier,” which is attractive for fabrication of ultra-large...

  • Quantum confinement of excitons in dendrite-like GaN nanowires. Ghosh, R.; Basak, D. // Journal of Applied Physics;10/15/2005, Vol. 98 Issue 8, p086104 

    Dendrite-like GaN nanowires have been grown by direct reaction of gallium metal with ammonia without any catalyst in a simple grinding-mediated two-step process, the second step being annealing of the as-synthesized GaN powder at 800 °C. The samples have been characterized by x-ray...

  • Time-resolved cathodoluminescence study of carrier relaxation in GaAs/AlGaAs layers grown on a patterned GaAs(001) substrate. Rich, D. H.; Lin, H. T.; Konkar, A.; Chen, P.; Madhukar, A. // Applied Physics Letters;7/29/1996, Vol. 69 Issue 5, p665 

    We have examined the kinetics of carrier relaxation in three-dimensionally confined GaAs/AlGaAs layers obtained by growth on prepatterned GaAs(001) with time-resolved cathodoluminescence (CL). Time-delayed CL spectra at 87 K reveal that (i) relaxation of hot carriers into the largest 3D confined...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics