Hole-based memory operation in an InAs/GaAs quantum dot heterostructure

Marent, A.; Nowozin, T.; Gelze, J.; Luckert, F.; Bimberg, D.
December 2009
Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p242114
Academic Journal
We present an InAs/GaAs quantum dot (QD) memory structure with all-electrical data access which uses holes as charge carriers. Charging and discharging of the QDs are clearly controlled by a gate voltage. The stored information is read-out by a two-dimensional hole gas underneath the QD-layer. Time resolved drain-current-measurements demonstrate the memory operation. Present write times are 80 ns.


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