TITLE

Hole-based memory operation in an InAs/GaAs quantum dot heterostructure

AUTHOR(S)
Marent, A.; Nowozin, T.; Gelze, J.; Luckert, F.; Bimberg, D.
PUB. DATE
December 2009
SOURCE
Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p242114
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present an InAs/GaAs quantum dot (QD) memory structure with all-electrical data access which uses holes as charge carriers. Charging and discharging of the QDs are clearly controlled by a gate voltage. The stored information is read-out by a two-dimensional hole gas underneath the QD-layer. Time resolved drain-current-measurements demonstrate the memory operation. Present write times are 80 ns.
ACCESSION #
47039139

 

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