TITLE

Impact of <110> uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors

AUTHOR(S)
Ling Xia; del Alamo, Jesús A.
PUB. DATE
December 2009
SOURCE
Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p243504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter reports on a study of the impact of <110> uniaxial strain on the characteristics of InGaAs high electron mobility transistors (HEMT) by bending GaAs chips up to a strain level of 0.4%. Systematic changes in the threshold voltage and intrinsic transconductance were observed. These changes can be well predicted by Schrödinger–Poisson simulations of the one-dimensional electrostatics of the device that include the piezoelectric effect, Schottky barrier height change, and sub-band quantization change due to strain. The effect of <110> strain on the device electrostatics emerges as a dominant effect over that of transport in the studied InGaAs HEMTs.
ACCESSION #
47039137

 

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