TITLE

Thermomigration-induced magnetic degradation of current perpendicular to the plane giant magnetoresistance spin-valve read sensors operating at high current density

AUTHOR(S)
Zeng, Ding Gui; Chung, Kyung-Won; Bae, Seongtae
PUB. DATE
December 2009
SOURCE
Journal of Applied Physics;Dec2009, Vol. 106 Issue 11, p113908
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The theoretically analyzed physical mechanism of thermomigration (TM)-induced magnetic degradation that occurred in the current perpendicular to the plane (CPP) Ir20Mn80 exchange biased giant magnetoresistance spin-valve (EBGMR SV) read sensors is presented. The device size was changed from 60×60 to 140×140 nm2 at the fixed aspect ratio of 1(L):1(W), and the operating current density was varied from J=1×108 A/cm2 to J=5×108 A/cm2 in a current control mode. It was numerically confirmed that the Mn atomic interdiffusion through the Ir20Mn80/Co80Fe20 interface due to the thermally induced mass transport and the “Villari magnetic reversal” of the CoFe pinned layer due to the thermally induced stress are mainly responsible for the serious degradation of exchange bias and magnetoresistance. Furthermore, the TM-induced magnetic degradation of CPP EBGMR SV read sensors was found to become severe by increasing the operating current density. However, interestingly, this undesirable magnetic degradation was dramatically diminished by reducing the read sensors below 100(L)×100(W) nm2.
ACCESSION #
46766444

 

Related Articles

  • Irradiation-controlled giant magnetoresistance of PtMn-based spin valve. Sheng-Huang Huang; Chih-Huang Lai; Chiang, C. C.; Cheng-Han Yang // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08R508 

    He+-ion irradiation resulted in the direct ordering of PtMn without postannealing. Samples were irradiated with 2 MeV He+ ions and a beam current of 1.08 μA/cm2 such that the corresponding surface temperature was 190 °C. The exchange bias direction was set in situ during irradiation in a...

  • Spin-transfer effects in nanoscale magnetic tunnel junctions. Fuchs, G. D.; Emley, N. C.; Krivorotov, I. N.; Braganca, P. M.; Ryan, E. M.; Kiselev, S. I.; Sankey, J. C.; Ralph, D. C.; Buhrman, R. A.; Katine, J. A. // Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1205 

    We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, <5 Ω μm2, barriers. The current densities required for magnetic switching are similar to values for all-metallic...

  • Reading and writing of vortex circulation in pseudo-spin-valve ring devices. Hayward, T. J.; Llandro, J.; Balsod, R. B.; Bland, J. A. C.; Castaño, F. J.; Morecroft, D.; Ross, C. A. // Applied Physics Letters;9/11/2006, Vol. 89 Issue 11, p112510 

    The authors present a simple method of reading the circulation direction of vortex states in pseudo-spin-valve ferromagnetic ring devices via magnetoresistance measurements. It is shown that by placing the current contacts asymmetrically onto the structure, the circulation of a vortex state in...

  • Study of the interlayer coupling and its temperature dependence in spin valves with Ru and Cu spacers. Alayo, W.; Baggio-Saitovitch, E. // Journal of Applied Physics;Apr2010, Vol. 107 Issue 7, p073909 

    The IrMn/Co/NM/Ni81Fe19 spin valves, with the nonmagnetic (NM) spacers of Ru and Cu, were grown by sputtering and analyzed by magnetization versus magnetic field measurements at several temperatures. The loop of the free layer exhibits a loop shift proportional to the interlayer coupling...

  • The number of Cu lamination effect on current-perpendicular-to-plane giant-magnetoresistance of spin valves with Fe50Co50 alloy. Yuasa, H.; Fukuzawa, H.; Iwasaki, H.; Sahashi, M. // Journal of Applied Physics;6/1/2005, Vol. 97 Issue 11, p113907 

    The current-perpendicular-to-plane (CPP) giant-magnetoresistance (GMR) of spin valves with Fe50Co50 alloy was investigated. It has been reported that the Cu inserted in Fe50Co50 is effective for enhancing CPP-GMR. In this paper, we investigated the number of Cu lamination effect on CPP-GMR and...

  • Giant magnetoresistance in half metallic Fe3O4 based spin valve structures. Tripathy, D.; Adeyeye, A. O. // Journal of Applied Physics;5/1/2007, Vol. 101 Issue 9, p09J505 

    A systematic study of the magnetic and in-plane magnetotransport properties of Fe3O4/Cu/Ni80Fe20 spin valve structures is presented. We observed that the spin valve structure is highly sensitive to the thickness of the Cu spacer layer tCu. For tCu=2 nm, the structure exhibits a clear anisotropic...

  • Magnetic and magnetoresistance properties of spin valves using epitaxial Fe3O4 (110) as the pinning layer. Matsuda, Hiroshi; Okamura, Soichiro; Shiosaki, Tadashi; Adachi, Hideaki; Sakakima, Hiroshi // Journal of Applied Physics;9/15/2005, Vol. 98 Issue 6, p063903 

    Magnetic and magnetoresistance (MR) properties of spin valves composed of Co/Cu/Co/iron oxide layer were studied using epitaxial Fe3O4 (110) grown on MgO (110) as the pinning layer. It was confirmed from the in-plane magnetization curves that the epitaxial Fe3O4 (110) films have the easy axes...

  • Ultrathin CoPt-pinned current perpendicular to the plane spin valves. Maat, S.; Checkelsky, J.; Carey, M. J.; Katine, J. A.; Childress, J. R. // Journal of Applied Physics;12/1/2005, Vol. 98 Issue 11, p113907 

    The magnetics and magnetotransport of current perpendicular to the plane (CPP) giant magnetoresistive (GMR) spin valves utilizing thin CoPt hard magnet pinning layers on Cr seed layers are investigated. 50-Ã…-thick CoPt18 films grown on >20 Ã… Cr seed layers exhibit a coercivity of...

  • Measurement of spin diffusion length in sputtered Ni films using a special exchange-biased spin valve geometry. Moreau, Charles E.; Moraru, Ion C.; Birge, Norman O.; Pratt, William P. // Applied Physics Letters;1/1/2007, Vol. 90 Issue 1, p012101 

    The authors report the spin diffusion length at 4.2 K in sputtered Ni of lsfNi=21±2 nm, and spin-dependent scattering parameters in Ni and at Ni/Cu interfaces. They have employed current perpendicular to plane giant magnetoresistance in both a traditional and an alternative exchange-biased...

Share

Read the Article

Courtesy of

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics