Room temperature piezoelectric displacement detection via a silicon field effect transistor

Mahboob, I.; Nishiguchi, K.; Fujiwara, A.; Yamaguchi, H.
December 2009
Applied Physics Letters;12/7/2009, Vol. 95 Issue 23, p233102
Academic Journal
An electromechanical oscillator embedded with a two dimensional electron gas is capacitively coupled to a silicon field effect transistor (Si-FET). The piezovoltage induced by the mechanical motion modulates the current passing through the Si-FET enabling the electromechanical oscillator’s position to be monitored. When the Si-FET is biased at its optimal point, the motion induced piezovoltage can be amplified resulting in a displacement sensitivity of 6×10-12 mHz-1/2 for a 131 kHz GaAs resonator which is among the highest recorded for an all-electrical room temperature detection scheme.


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