Controlling properties of field effect transistors by intermolecular cross-linking of molecular dipoles

Paska, Yair; Haick, Hossam
December 2009
Applied Physics Letters;12/7/2009, Vol. 95 Issue 23, p233103
Academic Journal
In this study, we show that systematic molecular control over a silicon-on-insulator field effect transistor (SOI-FET) device can be achieved by controlling the Si–O–Si intermolecular interactions between adjacent trichlorosilane molecules. This is attributed to the fact that Si–O–Si intermolecular bonds between the parallel molecular dipoles change the overall charge distribution within the organic layer, and, consequently, alter the channel surface potential. Changes in the potential within the formed monolayer close to the channel alter the source-drain current and, consequently, the transistor threshold (turn on) voltage.


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