Low-voltage organic transistors and inverters with ultrathin fluoropolymer gate dielectric

Walser, M. P.; Kalb, W. L.; Mathis, T.; Batlogg, B.
December 2009
Applied Physics Letters;12/7/2009, Vol. 95 Issue 23, p233301
Academic Journal
We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages <1–2 V, enabled by the almost trap-free interface between the organic semiconductor and an ultrathin (<20 nm) and highly insulating single-layer fluoropolymer gate dielectric (Cytop). OFETs with PTCDI-C13 (N,N′-ditridecylperylene-3,4,9,10-tetracarboxylicdiimide) as semiconductor exhibit outstanding transistor characteristics; very low threshold voltage (0.2 V), onset at 0 V, steep subthreshold swing (0.1–0.2 V/decade), no hysteresis, and excellent stability against gate bias stress. It is gratifying to notice that such small OFET operating voltages can be achieved with the relatively simple processing techniques employed in this study.


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