TITLE

Improving microstructural quality of semipolar (112_2) GaN on m-plane sapphire by a two-step growth process

AUTHOR(S)
Qian Sun; Leung, Benjamin; Yerino, Christopher D.; Yu Zhang; Jung Han
PUB. DATE
December 2009
SOURCE
Applied Physics Letters;12/7/2009, Vol. 95 Issue 23, p231904
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter reports a two-step growth process for improving microstructural quality of semipolar (112_2) GaN on nitridized m-plane sapphire. The two-step growth of (112_2) GaN, islanding growth under high pressure followed by islands coalescence under low pressure, went through a roughening-recovery process, which was found very effective in reducing the density of stacking faults and dislocations in (112_2) GaN. The x-ray rocking curves of both on-axis and off-axis planes were narrowed down by more than 50%. The improvement of GaN quality was confirmed by a boost in blue and green optical output of semipolar (112_2) InGaN/GaN quantum wells.
ACCESSION #
46708402

 

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