Epitaxial fabrication and memory effect of ferroelectric LiNbO3 film/AlGaN/GaN heterostructure

Lanzhong Hao; Jun Zhu; Wenbo Luo; Huizhong Zeng; Yanrong Li; Wen Huang; Xiuwei Liao; Ying Zhang
December 2009
Applied Physics Letters;12/7/2009, Vol. 95 Issue 23, p232907
Academic Journal
A metal-ferroelectric-semiconductor structure was fabricated epitaxially by depositing a LiNbO3 film on the surface of the AlGaN/GaN template with two dimensional electron gas (2DEG). The capacitance-voltage characteristics were studied. Counterclockwise memory windows could be observed clearly. The size of the window first increased with increasing forward bias (Vmax) and reached a maximum of 2.5 V when Vmax=6 V. This was attributed to the switchable ferroelectric polarization modulating on 2DEG. When Vmax exceeded 6 V, the window decreased due to electron injection. These results indicated that ferroelectric films combined with AlGaN/GaN would hold promise for next-generation memory devices.


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