Trapping-detrapping fluctuations in organic space-charge layers

Carbone, Anna; Pennetta, Cecilia; Reggiani, Lino
December 2009
Applied Physics Letters;12/7/2009, Vol. 95 Issue 23, p233303
Academic Journal
A trapping-detrapping model is proposed for explaining the current fluctuation behavior in organic semiconductors (polyacenes) operating under current-injection conditions. The fraction of ionized traps obtained from the current-voltage characteristics, is related to the relative current noise spectral density at the trap-filling transition. The agreement between theory and experiments validates the model and provides an estimate of the concentration and energy level of deep traps.


Related Articles

  • Reduced 1/f noise in p-Si[sub 0.3]Ge[sub 0.7] metamorphic metal–oxide–semiconductor field-effect transistor. Myronov, M.; O. A. Mironov, M.; S. Durov, M.; T. E. Whall, M.; E. H. C. Parker; T. Hackbarth, M.; G. Höck, M.; H.-J. Herzog, M.; U. König, M. // Applied Physics Letters;1/26/2004, Vol. 84 Issue 4, p610 

    We have demonstrated reduced 1/f low-frequency noise in sub-μm metamorphic high Ge content p-Si[sub 0.3]Ge[sub 0.7] metal–oxide–semiconductor field-effect transistors (MOSFETs) at 293 K. Three times lower normalized power spectral density (NPSD) S[sub I[sub D]]/I[sub D][sup 2]...

  • Digital measurement of resistance fluctuations. Moon, J. S.; Mohamedulla, Arshia F.; Birge, Norman O. // Review of Scientific Instruments;Oct92, Vol. 63 Issue 10, p4327 

    We describe a digital technique for measuring the spectral density of resistance fluctuations with simultaneous background subtraction. The technique implements either of two equivalent ac bridge techniques that rely on extremely good orthogonality between the two channels of a dual-phase...

  • Low frequency noise in two-dimensional metal-semiconductor field effect transistor. Levinshtein, M.E.; Rumyantsev, S.-L. // Applied Physics Letters;5/27/1996, Vol. 68 Issue 22, p3138 

    Reports the low frequency noise in the two-dimensional metal-semiconductor field effect transistor. Description of the noise level; Value of the Hooge constant at room temperature; Frequency dependence of the relative spectral density of fluctuations.

  • 1/ f noise and number fluctuations. Clevers, R. H. M. // Journal of Applied Physics;11/15/1986, Vol. 60 Issue 10, p3794 

    Focuses on the spectral density for number fluctuations and for conductance fluctuations arising from such intraband transitions. Use of a n-type homogeneous semiconductor sample; Semiconductor in which only intraband transition occur; Transition between traps or donors and the conduction band.

  • Can the dual property of noise representation be recovered within generalized field methods? Shiktorov, Pavel; Starikov, Evgenij; Gruzˇinskis, Viktoras; Gonza´lez, Tomas; Mateos, Javier; Pardo, Daniel; Reggiani, Lino; Varani, Luca // AIP Conference Proceedings;2000, Vol. 511 Issue 1, p527 

    In the framework of the Green-function formalism, the generalized impedance and admittance field methods for the calculation of the spectral density of voltage and current fluctuations of semiconductor devices are introduced. It is shown that this scheme can be realized when noise sources...

  • 1/f noise in ring geometries. Clevers, R. H. M. // Journal of Applied Physics;5/1/1989, Vol. 65 Issue 9, p3477 

    Focuses on a study which recalculated the effective number of carriers of a sample of 1/Æ’ noise with ring geometry analytically and numerically. Description of the spectral density of 1/Æ’ in the alternating current open-circuit voltage fluctuations in homogeneous semiconductors; Details...

  • Two-point estimates of the spectral density function with finite separation and volume. Carlson, A. W. // Journal of Applied Physics;10/15/1991, Vol. 70 Issue 8, p4033 

    Provides information on a study which discussed the two-point estimates of the spectral density function with finite separation and volume. Capability of a finite measurement volume; Result of the fluctuations of density and potential in tokamak plasmas; Measurement of the fluctuations; Mean...

  • Phase Fluctuations and Single-Fermion Spectral Density in 2D Systems with Attraction. Gusynin, V. P.; Loktev, V. M.; Sharapov, S. G. // Journal of Experimental & Theoretical Physics;Jun2000, Vol. 90 Issue 6, p993 

    The effect of static fluctuations in the phase of the order parameter on the normal and superconducting properties of a 2D system with attractive four-fermion interaction is studied. Analytic expressions for the fermion Green's function, its spectral density, and the density of states are...

  • An individual particle approach to noise in pseudomorphic heterojunction field effect transistors. Moglestue, C. // Chaos;Sep2001, Vol. 11 Issue 3 

    The fluctuating steady state current through a pseudomorphic heterojunction field-effect transistor at a typical working point has been calculated by means of the Monte Carlo particle model. This method was chosen because the noise it yields reflects the physical processes in the transistor...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics