The origin and evolution of V-defects in InxAl1-xN epilayers grown by metalorganic chemical vapor deposition

Miao, Z. L.; Yu, T. J.; Xu, F. J.; Song, J.; Huang, C. C.; Wang, X. Q.; Yang, Z. J.; Zhang, G. Y.; Zhang, X. P.; Yu, D. P.; Shen, B.
December 2009
Applied Physics Letters;12/7/2009, Vol. 95 Issue 23, p231909
Academic Journal
Near-lattice-matched and highly compressive-strained InxAl1-xN epilayers were grown on GaN templates by metalorganic chemical vapor deposition. The V-defects associated with screw-component threading dislocations (TDs) were found in all the InxAl1-xN layers. Their origin and evolution were investigated through near-lattice-matched In0.173Al0.827N layers with different thicknesses. Furthermore, small V-defects not associated with TDs were also found in InxAl1-xN layers with high In composition (x=0.231). Stacking mismatch boundaries induced by lattice relaxation in InxAl1-xN epilayers under large strain is believed to be another mechanism forming V-defects.


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