Control of current-jump induced by voltage, temperature, light in p-type GaAs: Programmable critical temperature sensor

Sungyoul Choi; Bong-Jun Kim; Yong Wook Lee; Yong Sik Lim; Jeongyong Choi; Hyun-Tak Kim
December 2009
Applied Physics Letters;12/7/2009, Vol. 95 Issue 23, p231910
Academic Journal
For two-terminal devices fabricated by Be (or Mn)-doped p-type epitaxial GaAs thin films, when the Mott metal-insulator transition (MIT) as current jump occurs, we observe that the energy gap of GaAs is not shifted, its peak intensity decreases in an applied voltage, and that the MIT temperature is between 410 and 440 K, and that the current jump is controlled by temperature, voltage and light intensity. The control of the jump voltage, a characteristic of the Mott MIT, reveals that these devices can be applied for programmable critical temperature sensors or optical sensors with high sensitivity.


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