Properties of vanadium and tantalum granular oxide-metal tunnel junctions fabricated by electrochemical anodization

Fan, Wenbin; Kirkwood, David; Lu, Jiwei; Wolf, Stuart A.
December 2009
Applied Physics Letters;12/7/2009, Vol. 95 Issue 23, p232110
Academic Journal
Localized electrochemical anodization has been used to prepare lateral vanadium (V) and tantalum (Ta) tunnel junctions. Electrical transport properties of these junctions were investigated at various temperatures ranging from 25 to 135 °C. A strong nonlinear current-voltage (I-V) curve indicates nonohmic transport which we believe is due to tunnel junction behavior. The metal-insulator transition was observed in the V junction at ∼80 °C. The microstructure of these junctions explored by transmission electron microscope is consistent with metallic grains embedded in an oxide matrix and we therefore expect tunneling between the metallic grains to be the dominant transport mechanism.


Related Articles

  • Metal–insulator transition of VO[sub 2] thin films grown on TiO[sub 2] (001) and (110) substrates. Muraoka, Y.; Hiroi, Z. // Applied Physics Letters;1/28/2002, Vol. 80 Issue 4, p583 

    The effect of uniaxial stress along the c axis on the metal–insulator transition of VO[sub 2] has been studied in the form of epitaxial thin films grown on TiO[sub 2] (001) and (110) substrates. A large reduction in the transition temperature T[sub MI] from 341 K for a single crystal to...

  • Observation of a vacuum tunnel gap in a transmission electron microscope using a micromechanical.... Lutwyche, M.I.; Wada, Y. // Applied Physics Letters;5/22/1995, Vol. 66 Issue 21, p2807 

    Observes the vacuum tunnel gap between two conductors in a transmission electron microscope (TEM). Use of a micromechanical scanning tunneling microscope; Time dependence of tunnel current and attractor voltage for working tunnel junction; Effect of bias-voltage generated electric field on TEM...

  • Quantifying transient states in materials with the dynamic transmission electron microscope. Campbell, Geoffrey H.; LaGrange, Thomas; Kim, Judy S.; Reed, Bryan W.; Browning, Nigel D. // Journal of Electron Microscopy;Aug2010 Supplement 1, Vol. 59 Issue S1, pS67 

    The dynamic transmission electron microscope (DTEM) offers a means of capturing rapid evolution in a specimen through in situ microscopy experiments by allowing 15-ns electron micrograph exposure times. The rapid exposure time is enabled by creating a burst of electrons at the emitter by...

  • Silver antimony Ohmic contacts to moderately doped n-type germanium. Dumas, D. C. S.; Gallacher, K.; Millar, R.; MacLaren, I.; Myronov, M.; Leadley, D. R.; Paul, D. J. // Applied Physics Letters;4/21/2014, Vol. 104 Issue 16, p1 

    A self doping contact consisting of a silver/antimony alloy that produces an Ohmic contact to moderately doped n-type germanium (doped to a factor of four above the metal-insulator transition) has been investigated. An evaporation of a mixed alloy of Ag/Sb (99%/1%) onto n-Ge (ND = 1 × 1018...

  • On electron tunneling in the metal-insulator-semiconductor systems including various electron effective masses. Majkusiak, B.; Jakubowski, A. // Journal of Applied Physics;10/15/1985, Vol. 58 Issue 8, p3141 

    Presents a study which examined electron tunneling in metal-insulator-semiconductor systems including various electron effective masses. Details of experimental techniques used; Discussion on the theory of tunneling probability; Details of a model of the metal-insulator-semiconductor tunnel diode.

  • Electrical oscillations induced by the metal-insulator transition in VO2. Kim, Hyun-Tak; Kim, Bong-Jun; Choi, Sungyoul; Chae, Byung-Gyu; Lee, Yong Wook; Driscoll, T.; Qazilbash, M. M.; Basov, D. N. // Journal of Applied Physics;Jan2010, Vol. 107 Issue 2, p023702 

    We systematically investigate the characteristics of an electrical oscillation observed in two-terminal vanadium dioxide (VO2) devices. These oscillations are observed at room temperature in a simple electrical circuit without inductive components. The circuit is composed only of a dc voltage...

  • Optoelectronic and all-optical multiple memory states in vanadium dioxide. Coy, Horacio; Cabrera, Rafmag; Sepúlveda, Nelson; Fernández, Félix E. // Journal of Applied Physics;Dec2010, Vol. 108 Issue 11, p113115 

    Vanadium dioxide exhibits a well-known insulator-to-metal transition during which several of its physical properties change significantly. A hysteresis loop develops for each of them as the material is heated and then cooled through the transition. In this work VO2/SiO2 samples were...

  • New aspects of the metal–insulator transition in single-domain vanadium dioxide nanobeams. Jiang Wei; Zenghui Wang; Wei Chen; Cobden, David H. // Nature Nanotechnology;Jul2009, Vol. 4 Issue 7, p420 

    Many strongly correlated electronic materials have a domain structure that greatly influences the bulk properties and obscures the fundamental properties of the homogeneous material. Nanoscale samples, on the other hand, can be smaller than the characteristic domain size, thus making it possible...

  • Correlated electron systems: Better than average. Natelson, Douglas // Nature Nanotechnology;Jul2009, Vol. 4 Issue 7, p406 

    The article discusses research being done on metal-insulator transition in single-crystal nanobeams. It references a study by David Cobden and colleagues, published in the 2009 issue of the journal. The study examined the details of metal-insulator transition using suspended nanoscale vanadium...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics