Buffer layer-enhanced magnetic field effect in manganite-based heterojunctions

Lü, W. M.; Sun, J. R.; Chen, Y. Z.; Shang, D. S.; Shen, B. G.
December 2009
Applied Physics Letters;12/7/2009, Vol. 95 Issue 23, p232514
Academic Journal
Influence of magnetic field on the rectifying property of the La0.67Ca0.33MnO3/LaMnO3/SrTiO3:0.05 wt %Nb heterojunctions has been studied. In addition to an enhanced magnetic response of the current-voltage characteristics, a field-induced increase in junction resistance, which is an effect different from that in the junctions without the LaMnO3 layer, is observed. The positive magnetoresistance is further found to show a systematic variation with the thickness of the LaMnO3 layer (t), growing rapidly with the increase of layer thickness and getting a maximum of ∼91% at t=4 nm (T=50 K and ΔH=5 T). Analysis of the current-voltage and capacitance-voltage characteristics indicates a field-induced growth of interfacial barrier, which is responsible for the abnormal effect observed here.


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