Extending the nanocluster-Si/erbium sensitization distance in Er-doped silicon nitride: The role of Er–Er energy migration

In Yong Kim; Jung H. Shin; Kyung Joong Kim
November 2009
Applied Physics Letters;11/30/2009, Vol. 95 Issue 22, p221101
Academic Journal
The nanocluster-Si (nc-Si)/Er3+ interaction distance in Er-doped silicon nitride is investigated using SiOx/Si3N4:Er/Si3N4/Si3N4:Er multilayers. The composition and thickness of SiOx layers were fixed to provide constant sensitization, while the thickness of Si3N4:Er layers was varied to probe distance-dependence of sensitization. We find that while the distance over which an nc-Si transfers energy to an Er3+ ion is constant at ∼0.3 nm, the effective sensitization distance over which an Er3+ is sensitized via nc-Si can be as large as ∼1.3 nm. Based on a widely used phenomenological model of the distance-dependent Er3+ photoluminescence intensity, we identify Er–Er energy migration as an important factor for the extension of the nc-Si sensitization distance over nc-Si energy transfer distance.


Related Articles

  • Phosphorescent-sensitized triplet-triplet annihilation in tris(8-hydroxyquinoline) aluminum. Tanaka, Isao; Tokito, Shizuo // Journal of Applied Physics;6/1/2005, Vol. 97 Issue 11, p113532 

    We characterized the photoluminescence properties of an amorphous tris(8-hydroxyquinoline) aluminum (Alq3) thin film heavily doped with fac tris(2-phenylpyridine) iridium [Ir(ppy)3] at 8 K. Not only green fluorescence but also red phosphorescence from Alq3 was clearly observed, where Ir(ppy)3...

  • Experimental evidence on quantum well–quantum dash energy transfer in tunnel injection structures for 1.55 μm emission. Polish_hook, G.; Poloczek, P.; Podemski, P.; Kudrawiec, R.; Misiewicz, J.; Somers, A.; Hein, S.; Höfling, S.; Forchel, A. // Applied Physics Letters;2/19/2007, Vol. 90 Issue 8, p081915 

    Here comes a report on the investigation of the energy transfer in InP-based tunnel injection structures, consisting of InAs/InAlGaAs quantum dashes (QDashes) and an InGaAs/InAlGaAs quantum well (QW), designed for 1.55 μm emission at room temperature. Temperature dependent photoluminescence...

  • Temperature dependence of the energy transfer from amorphous silicon nitride to Er ions. Li, R.; Yerci, S.; Dal Negro, L. // Applied Physics Letters;7/27/2009, Vol. 95 Issue 4, p041111 

    The 1.54 μm photoluminescence and decay time of Er-doped amorphous silicon nitride films with different Si concentrations are studied in the temperature range of 4 to 320 K. The temperature quenching of the Er emission lifetime demonstrates the presence of nonradiative trap centers due to...

  • Photoluminescence of Si-rich silicon nitride: Defect-related states and silicon nanoclusters. Wang, Minghua; Li, Dongsheng; Yuan, Zhizhong; Yang, Deren; Que, Duanlin // Applied Physics Letters;3/26/2007, Vol. 90 Issue 13, p131903 

    The photoluminescence (PL) from defect-related states and Si nanoclusters was observed in the Si-rich silicon nitride films simultaneously. The weaker red-light emission of Si nanoclusters was obtained in the 1100 °C annealed films with the 514.5 nm excitation. Due to the quantum confinement...

  • Photoluminescence quenching through resonant energy transfer in blends of conjugated polymer with low-molecular acceptor. Zapunidi, S. A.; Paraschuk, D. Yu. // Journal of Experimental & Theoretical Physics;Dec2008, Vol. 107 Issue 6, p1079 

    A model is proposed for photoluminescence quenching due to resonant energy transfer in a blend of a conjugated polymer and a low-molecular energy acceptor. An analytical dependence of the normalized photoluminescence intensity on the acceptor concentration is derived for the case of a...

  • ARE THERE DIFFERENT KINDS OF ENERGY?  // World Almanac for Kids;2002, p64 

    There are different types of energy, potential and kinetic. Potential energy is energy that is stored during periods of rest. Potential energy changes into kinetic energy once it is used.

  • Energy transfer from Eu(III) complexes to dyes in their mixed nanostructures. II. Dudar’, S.; Sveshnikova, E.; Ermolaev, V. // Optics & Spectroscopy;May2008, Vol. 104 Issue 5, p724 

    The effects of the concentration of a number of dyes in an aqueous solution and of the method of formation of mixed nanostructures of dyes and Eu(MBTA)3phen (MBTA is p-methoxybenzoyltrifluoroacetone; phen is 1,10-phenanthroline) complexes that form these structures on the luminescence decay...

  • Transmission of low-frequency sound through the water-to-air interface. Godin, O. // Acoustical Physics;May2007, Vol. 53 Issue 3, p305 

    L.M. Brekhovskikh revealed and studied the important role played by inhomogeneous waves emitted by a point source when they pass through an interface with a medium in which the velocity of sound is lower, for example, from water to air. This paper studies the energy characteristics of sound...

  • Shear dispersion and turbulence decorrelation by differential rotation. Garcia, O. E.; Bian, N. H. // Physics of Plasmas;Jan2005, Vol. 12 Issue 1, p014503 

    The shear enhanced dispersion of a passive scalar field subject to differential rotation is investigated analytically and interpretations are given in terms of turbulence shear decorrelation. Using the method of advected coordinates, the enhanced dispersion caused by steady and oscillatory flows...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics