TITLE

Extending the nanocluster-Si/erbium sensitization distance in Er-doped silicon nitride: The role of Er–Er energy migration

AUTHOR(S)
In Yong Kim; Jung H. Shin; Kyung Joong Kim
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/30/2009, Vol. 95 Issue 22, p221101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The nanocluster-Si (nc-Si)/Er3+ interaction distance in Er-doped silicon nitride is investigated using SiOx/Si3N4:Er/Si3N4/Si3N4:Er multilayers. The composition and thickness of SiOx layers were fixed to provide constant sensitization, while the thickness of Si3N4:Er layers was varied to probe distance-dependence of sensitization. We find that while the distance over which an nc-Si transfers energy to an Er3+ ion is constant at ∼0.3 nm, the effective sensitization distance over which an Er3+ is sensitized via nc-Si can be as large as ∼1.3 nm. Based on a widely used phenomenological model of the distance-dependent Er3+ photoluminescence intensity, we identify Er–Er energy migration as an important factor for the extension of the nc-Si sensitization distance over nc-Si energy transfer distance.
ACCESSION #
45610569

 

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