Laser-induced erasure and reversal of the permanent magnetization in a ferromagnet-dilute magnetic semiconductor hybrid structure

Fan, Y.-H.; Puls, J.; Halm, S.; Sadofev, S.; Seifert, F.; Schuster, E.; Bacher, G.; Keune, W.; Henneberger, F.
November 2009
Applied Physics Letters;11/30/2009, Vol. 95 Issue 22, p223502
Academic Journal
Manipulation of the magnetizations via laser pulse heating is studied for a hybrid structure, where the fringe field of a metallic ferromagnet controls remotely the carrier and magnetic ion spins in a diluted magnetic semiconductor quantum well. A single nanosecond pulse with an energy density of 160 pJ/μm2 is found to be sufficient to erase the ferromagnet magnetization. Applying a reversed external bias field about five times below the ferromagnet coercive field, a complete reversal of the magnetization via optical excitation is demonstrated.


Related Articles

  • The effect of intense laser light on the absorption-edge region of the spectrum of a CdCr2Se4 ferromagnetic semiconductor. Golik, L. L.; Kun�kova, Z. �. // Semiconductors;May99, Vol. 33 Issue 5, p544 

    The effect of intense incident laser light on the spectral dependence of the absorption of circularly polarized light is investigated in single crystals of CdCr[sub 2]Se[sub 4] in the neighborhood of the absorption edge for temperatures in the range 100-130 K. The observed large changes in the...

  • Magnetic ordering in GaAlAs:Mn double well structure. Boselli, M. A.; da Cunha Lima, I. C.; Ghazali, A. // Journal of Applied Physics;5/1/2000, Vol. 87 Issue 9, p6439 

    The magnetic order in the diluted magnetic semiconductor barrier of double AlAs/GaAs:Mn quantum well structures is investigated by Monte Carlo simulations. A confinement adapted RKKY mechanism is implemented for indirect exchange between Mn ions mediated by holes. It is shown that, depending on...

  • Calculation of Carrier Scattering in Mn-doped InGaAs Quantum Well with Hole-mediated Ferromagnetism. Shchurova, Ljudmila; Kulbachinskii, Vladimir // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p447 

    We have studied thermodynamic, transport and magnetotransport properties of free charge carriers in the diluted magnetic semiconductor with a quantum well In0.17Ga0.83As in the GaAs, delta-doped by C and Mn. We have carried out thermodynamic calculations of the system composed of free holes,...

  • Tunneling Control of Optical Properties of a Quantum Well from Adjacent Quantum Well by Coherent Population Trapping Effect. Barantsev, K. A.; Litvinov, A. N.; Velichko, E. N. // Acta Physica Polonica, A.;2014, Vol. 126 Issue 5, p1069 

    The coherent population trapping effect in double tunnel-coupled quantum wells is analyzed. One of two quantum wells interacts with the two-frequency laser radiation and low-frequency field, thus forming a closed contour of excitation. It is possible to control the excited level population in...

  • Magnetic-field-dependent excitation transfer in quantum wells of diluted magnetic semiconductor. Uchiyama, K.; Kubota, S.; Matsumoto, T.; Kobayashi, K.; Hori, H. // Applied Physics A: Materials Science & Processing;Apr2014, Vol. 115 Issue 1, p99 

    We studied the excitation transfer in double quantum wells of a diluted magnetic semiconductor using a scanning near-field optical microscope at 7 K in external magnetic fields up to 9 T. In each quantum well, local energy minima are generated by local fluctuation of layer thickness and doping...

  • Cold and Hot Excitons in CdMnTe/CdMgTe Quantum Wells in Strong Excitation Regime and External Magnetic Field. Trajnerowicz, A.; Golnik, A.; Kossacki, P.; Bardyszewski, W.; Wiater, M.; Karczewski, G.; Wojtowicz, T. // Acta Physica Polonica, A.;Nov2009, Vol. 116 Issue 5, p849 

    Systematic studies of neutral heavy-hole excitonic line energy changes in a strong excitation regime were carried out by means of a pump-probe method for quantum wells containing a 2D gas of free holes. Energy shift of Xe1hh1 line was analyzed for different excitation energies at fixed delay...

  • Role of the host matrix in the carrier recombination of InGaAsN alloys. Vinattieri, A.; Alderighi, D.; Zamfirescu, M.; Colocci, M.; Polimeni, A.; Capizzi, M.; Gollub, D.; Fischer, M.; Forchel, A. // Applied Physics Letters;4/28/2003, Vol. 82 Issue 17, p2805 

    We present an experimental study of the carrier recombination dynamics in high-quality (InGa)(AsN)/GaAs and Ga(AsN)/GaAs quantum-well structures after picosecond excitation. A comparison among samples with and without nitrogen and with different In concentration shows that nonradiative channels...

  • Intense laser field effect on impurity states in a semiconductor quantum well: transition from the single to double quantum well potential. Duque, C.; Mora-Ramos, M.; Kasapoglu, E.; Sari, H.; S�kmen, I. // European Physical Journal B -- Condensed Matter;Jun2011, Vol. 81 Issue 4, p441 

    In this work are studied the intense laser effects on the impurity states in GaAs-GaAlAs quantum wells under applied electric and magnetic fields. The electric field is taken oriented along the growth direction of the quantum well whereas the magnetic field is considered to be in-plane. The...

  • Electric Control of Magnetic Moment in a Ferromagnet/Semiconductor Hybrid System. Korenev, V.L. // JETP Letters;11/10/2003, Vol. 78 Issue 9, p564 

    It is shown that the exchange coupling in a “ferromagnet/semiconductor quantum well” heterostructure allows the electric control of the orientation of magnetic moment in the ferromagnet. A highly anisotropic exchange interaction between holes in the quantum well and magnetic atoms in...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics