TITLE

Valence band offset and interface stoichiometry at epitaxial Si3N4/Si(111) heterojunctions formed by plasma nitridation

AUTHOR(S)
Hong-Mao Lee; Cheng-Tai Kuo; Hung-Wei Shiu; Chia-Hao Chen; Shangjr Gwo
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/30/2009, Vol. 95 Issue 22, p222104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ultrathin β-Si3N4(0001) epitaxial films formed by N2-plasma nitridation of Si(111) substrates have been studied by photoelectron spectroscopy using synchrotron radiation. The valence band offset at the β-Si3N4/Si interface was determined by valence-band photoelectron spectra to be 1.8 eV. Furthermore, the Si 2p core-level emissions were analyzed for nitride (Si4+) and subnitride (Si3+ and Si+) components to characterize the interface stoichiometry. In contrast to the interfaces formed by ammonia thermal nitridation and N2-plasma nitridation at room temperature, the interface formed by N2-plasma nitridation at high substrate temperature is very close to subnitride free with an abrupt composition transition.
ACCESSION #
45610558

 

Related Articles

  • Valence electronic states of p-type β-FeSi2 single crystal studied by high-resolution and resonant photoelectron spectroscopy. Ogawa, Koji; Sasaki, Minoru; Ohnishi, Akimasa; Kitaura, Mamoru; Fujimoto, Hitoshi; Azuma, Junpei; Takahashi, Kazutoshi; Kamada, Masao // Applied Physics Letters;7/11/2011, Vol. 99 Issue 2, p022107 

    The valence electronic structure of p-type β-FeSi2 single crystal has been investigated by high-resolution and resonant photoelectron spectroscopy using synchrotron radiation. In the photoelectron spectrum at hν = 130 eV, the valence band has a prominent peak at the binding energy (EBin)...

  • Strong field photoelectron spectroscopy of polyatomic molecules: Acetylene. Moore, Noel P.; Levis, Robert J. // AIP Conference Proceedings;2000, Vol. 525 Issue 1, p461 

    The strong field photoelectron spectroscopy of a simple polyatomic molecule, acetylene is reported. Spectra were collected using 780 nm, 135 fs radiation for intensities ranging from 5.7×10[sup 13] W cm[sup -2] to 1.35×10[sup 14] W cm[sup -2]. A triplet of features observed at 1.59, 1.95...

  • Photoemission-induced charging of self-assembled Au nanoparticles on GaN substrates and the effect on surface band bending. Hwa Kyung Kim; Ho Won Jang; Jong-Lam Lee // Journal of Applied Physics;11/15/2005, Vol. 98 Issue 10, p104309 

    The effects of Au nanoparticles on the electronic properties of a GaN surface were investigated using synchrotron radiation photoelectron spectroscopy (SRPES). A 30-Å-thick Au film on GaN was transformed to nanoparticles by annealing at 300 °C. Ga 3d core level peak as well as Au 4f for...

  • Transition from a Bloch-Wilson to a free-electron density of states in Znn- clusters. Kostko, Oleg; Wrigge, Gert; Cheshnovsky, Ori; Issendorff, Bernd v. // Journal of Chemical Physics;12/8/2005, Vol. 123 Issue 22, p221102 

    We present photoelectron spectroscopy studies on Znn- in the size range of n=3–117. We show that zinc clusters exhibit a distinct transition in their electronic structure as a function of size. At small sizes (up to n=18) the clusters follow the Bloch-Wilson picture of the development of...

  • An accurate determination of barrier heights at the HfO2/Si interfaces. Puthenkovilakam, Ragesh; Chang, Jane P. // Journal of Applied Physics;9/1/2004, Vol. 96 Issue 5, p2701 

    X-ray photoelectron spectroscopy (XPS) combined with first principles simulations are used to investigate the band alignments of HfO2 on silicon. Our theoretical calculations predict dangling bond states originating from the partial occupancy of Hf d orbitals at a stoichiometric HfO2/Si...

  • Kinetics of solid phase interaction between Al and a-Si:H. Masaki, Yuichi; Ogata, Toshihiro; Ogawa, Hiroshi; Jones, David I. // Journal of Applied Physics;11/1/1994, Vol. 76 Issue 9, p5225 

    Presents a study on the kinetics of solid phase interaction between aluminum and a-Si:H. Characteristics of aluminum; Experimental setup; Details of the photoelectron spectroscopy study; Results and discussion.

  • Equivalent-core calculation of core-level relaxation energies in photoelectron spectroscopy: A.... Chen, Y.; Zhuang, G. // Journal of Chemical Physics;10/22/1998, Vol. 109 Issue 16, p6527 

    Examines the calculation of the core-level relaxation energies in photoelectron spectroscopy. Application of the self-consistent field (SCF) Hartree-Fock molecular orbital calculations in the spectroscopy; Usage of Hedin and Johansson calculations in the accuracy assessment of molecules and...

  • Electron states of benzene–Br2 donor–acceptor complex: HeI photoelectron spectroscopy and ab initio molecular orbital study. Ananthavel, S. P.; Hegde, M. S. // Journal of Chemical Physics;9/8/1996, Vol. 105 Issue 10, p4395 

    HeI photoelectron spectrum of weakly bonded π-donor complex of benzene with Br2 is obtained. Benzene orbitals are shifted to higher binding energy by 0.25 eV and the bromine orbitals to lower binding energy by about 0.5 eV due to the complex formation. Ab initio molecular orbital...

  • Photoelectron spectroscopy of Cu-n clusters: Comparison with jellium model predictions. Cha, Chia-Yen; Ganteför, G.; Eberhardt, W. // Journal of Chemical Physics;11/1/1993, Vol. 99 Issue 9, p6308 

    We present a comparison of the electronic level structure of Cu-n clusters with the jellium model using photoelectron spectroscopy of metal cluster anions. The spectra are recorded at an energy resolution of 30 meV using photon energies of up to 6.4 eV. We obtain a well resolved picture of the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics