TITLE

Enhancement in ultraviolet optoelectronic performance of photoconductive semiconductor switch based on ZnO nanobelts film

AUTHOR(S)
Zheng, X. J.; Yang, B.; Zhang, T.; Jiang, C. B.; Mao, S. X.; Chen, Y. Q.; Yuan, B.
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/30/2009, Vol. 95 Issue 22, p221106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoconductive semiconductor switches (PCSSs) based on ZnO nanobelts film and ZnO thin film were fabricated and applied into a test circuit to control the circuit state. The photosensitivity, leakage current from I-V characteristics, and the “on-off” voltage ratio from voltage spectrums of the former are 102 times higher, ten times lower, and two times higher than that of the latter, respectively. It indicates that PCSS based on ZnO nanobelts film has larger photoresponse, better “off state,” and more effective switching function, and they are regarded as consequences of longer transport path and higher surface to volume ratio according to oxygen chemisorption mechanism.
ACCESSION #
45610555

 

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