Electronic properties of Ge dangling bond centers at Si1-xGex/SiO2 interfaces

Afanas'ev, V. V.; Houssa, M.; Stesmans, A.; Souriau, L.; Loo, R.; Meuris, M.
November 2009
Applied Physics Letters;11/30/2009, Vol. 95 Issue 22, p222106
Academic Journal
Comparison between densities of paramagnetic Ge dangling bond defects and shallow acceptor traps at interfaces of the condensation-grown Si1-xGex layers (0.28≤x≤0.93) with thermal SiO2 as a function of Ge fraction, x, reveals quantitative agreement. Moreover, defect densities detected in both magnetic resonance and electrical experiments exhibit reversible passivation-depassivation behavior with respect to hydrogen indicating observation of the same defect (Ge Pb1 center). The corresponding energy level is estimated to lie at 0.35±0.10 eV above the valence band in bulk Si, which makes these defects behave as shallow acceptors in Ge-rich Si1-xGex.


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