Near band edge Schottky barrier height modulation using high-κ dielectric dipole tuning mechanism

Coss, B. E.; Loh, W.-Y.; Wallace, R. M.; Kim, J.; Majhi, P.; Jammy, R.
November 2009
Applied Physics Letters;11/30/2009, Vol. 95 Issue 22, p222105
Academic Journal
Schottky barrier height tuning using high-κ/SiO2 interfacial dipoles is reported. Schottky barrier heights of 1.0 and 0.2 eV are observed in a TaN/p-Si diode by insertion of thin layers of high-κ (LaOx,AlOx) and SiO2 at the metal-semiconductor interface. The dipole tunes the effective work function of TaN/p-Si by more than 0.8 eV to achieve effective Schottky barrier heights near conduction and valence band edge. LaOx (n-type) and AlOx (p-type) have a dipole potential offsets estimated to be 0.3 and 0.5 V, respectively. Applications to lowering contact resistivity are discussed, as well as a comparison of other dipole offsets.


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