TITLE

Low-voltage pentacene organic field-effect transistors with high-κ HfO2 gate dielectrics and high stability under bias stress

AUTHOR(S)
Xiao-Hong Zhang; Tiwari, Shree Prakash; Sung-Jin Kim; Kippelen, Bernard
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/30/2009, Vol. 95 Issue 22, p223302
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low-voltage pentacene organic field-effect transistors are demonstrated (operating voltage of -3 V) with high-κ hafnium dioxide gate dielectrics grown by atomic layer deposition at 200 °C. A high hole mobility of 0.39 cm2/V s with low threshold voltage (<-0.5 V) and low subthreshold slope of 120 mV/dec is achieved with a HfO2 dielectric layer modified with a phosphonic acid based treatment. A high value of 94.8 nF/V s is obtained for the product of mobility and capacitance density. The devices show excellent bias stress stability with or without the phosphonic acid at the HfO2 gate dielectric surface.
ACCESSION #
45610539

 

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