TITLE

Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO2 gate dielectrics grown by atomic layer deposition

AUTHOR(S)
Tiwari, Shree Prakash; Xiao-Hong Zhang; Potscavage, William J.; Kippelen, Bernard
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/30/2009, Vol. 95 Issue 22, p223303
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High performance solution-processed n-channel organic field-effect transistors based on [6,6]-phenyl C61 butyric acid methyl ester with low operating voltages (3 V) are demonstrated using a high-k hafnium dioxide gate dielectric grown by atomic layer deposition. Devices exhibit excellent n-channel performance with electron mobility values up to 0.14 cm2/V s, threshold voltages of ∼0.3 V, current on/off ratios >105, and very low values of subthreshold slope (∼140 mV/decade).
ACCESSION #
45610538

 

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