Inverted magnetoresistance in dual spin valve structures with a synthetic antiferromagnetic free layer

Fowley, C.; Chun, B. S.; Wu, H. C.; Abid, M.; Cho, J. U.; Noh, S. J.; Kim, Y. K.; Shvets, I. V.; Coey, J. M. D.
November 2009
Applied Physics Letters;11/30/2009, Vol. 95 Issue 22, p222506
Academic Journal
We report an oscillation of the giant magnetoresistance (GMR) ratio as a function of Ru layer thickness in the CoFe/Cu/[CoFe/Ru/CoFe]SAF/Cu/CoFe/IrMn dual spin valve (SV) structure. A normal GMR with a positive sign is observed for the thickness of Ru providing a ferromagnetic interlayer exchange coupling (IEC). The inverted GMR is observed for the thickness of Ru providing an antiferromagnetic IEC, which is consistent with IEC period across the Ru spacer as well as the electrical separation of the overall structure into two SVs connected in parallel.


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