TITLE

Inverted magnetoresistance in dual spin valve structures with a synthetic antiferromagnetic free layer

AUTHOR(S)
Fowley, C.; Chun, B. S.; Wu, H. C.; Abid, M.; Cho, J. U.; Noh, S. J.; Kim, Y. K.; Shvets, I. V.; Coey, J. M. D.
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/30/2009, Vol. 95 Issue 22, p222506
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report an oscillation of the giant magnetoresistance (GMR) ratio as a function of Ru layer thickness in the CoFe/Cu/[CoFe/Ru/CoFe]SAF/Cu/CoFe/IrMn dual spin valve (SV) structure. A normal GMR with a positive sign is observed for the thickness of Ru providing a ferromagnetic interlayer exchange coupling (IEC). The inverted GMR is observed for the thickness of Ru providing an antiferromagnetic IEC, which is consistent with IEC period across the Ru spacer as well as the electrical separation of the overall structure into two SVs connected in parallel.
ACCESSION #
45610521

 

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