Half integer quantum Hall effect in high mobility single layer epitaxial graphene

Xiaosong Wu; Yike Hu; Ming Ruan; Madiomanana, Nerasoa K.; Hankinson, John; Sprinkle, Mike; Berger, Claire; de Heer, Walt A.
November 2009
Applied Physics Letters;11/30/2009, Vol. 95 Issue 22, p223108
Academic Journal
The quantum Hall effect, with a Berry’s phase of π is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is ∼20 000 cm2/V·s at 4 K and 15 000 cm2/V·s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO2 and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphene-based electronics.


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