Electric-field tuning of the metal-insulator transition in ultrathin films of LaNiO3

Scherwitzl, R.; Zubko, P.; Lichtensteiger, C.; Triscone, J.-M.
November 2009
Applied Physics Letters;11/30/2009, Vol. 95 Issue 22, p222114
Academic Journal
Epitaxial ultrathin films of the metallic perovskite LaNiO3 were grown on (001) SrTiO3 substrates using off-axis rf magnetron sputtering. The film structure was characterized and their electrical properties investigated. Films thinner than 8 unit cells display a metal-insulator transition at a thickness dependent characteristic temperature. Hall measurements revealed p-type conduction, which was confirmed by electric field-effect experiments. Large changes in the transport properties and the metal-insulator transition temperature were observed for the thinnest LaNiO3 films as the carrier density was electrostatically tuned.


Related Articles

  • Ultra-thin filaments revealed by the dielectric response across the metal-insulator transition in VO2. Ramírez, J.-G.; Schmidt, Rainer; Sharoni, A.; Gómez, M. E.; Schuller, Ivan K.; Patiño, Edgar J. // Applied Physics Letters;2/11/2013, Vol. 102 Issue 6, p063110 

    Temperature dependent dielectric spectroscopy measurements on vanadium dioxide thin films allow us to distinguish between the resistive, capacitive, and inductive contributions to the impedance across the metal-insulator transition (MIT). We developed a single, universal, equivalent circuit...

  • Effect of annealing oxygen flow rate on the properties of vanadium oxide films deposited by reactive magnetron sputtering. Huafu Zhang; Zhiming Wu; Xuefei Wu; Yadong Jiang // Advanced Materials Research;2014, Vol. 936, p651 

    Vanadium oxide films were prepared on indium-tin oxide glass substrates at low temperature by means of reactive direct current magnetron sputtering and subsequent in-situ annealing process in pure oxygen ambient. In the process of annealing, the oxygen flow rates were varied from 0 to 15 SCCM in...

  • High-mobility transparent thin-film transistors with ZnSnLiO channel layer prepared by radio frequency magnetron sputtering. Wang, Hailong; Li, Bin; Hu, Zuofu; Wu, Huaihao; Zhou, Dongzhan; Peng, Yunfei; Gao, Song; Yi, Lixin; Wang, Yongsheng; Zhang, Xiqing // Applied Physics A: Materials Science & Processing;Mar2015, Vol. 118 Issue 4, p1535 

    We have fabricated transparent thin-film transistors with ZnSnLiO as active layers deposited by radio frequency magnetron sputtering at room temperature. The TFTs structure used in this study was a staggered bottom-gate, which consists of SiO as a gate insulator and heavily doped p-type Si(1 1...

  • Effect of annealing and gate insulator material changing on the performances of IGZO-TFT. Shi Jifeng; Chen Longlong; Sun Xiang // Applied Mechanics & Materials;2014, Issue 670-671, p1467 

    Indium-gallium-zinc oxide Thin Film Transistors(IGZO-TFT) were separately prepared with SiOx and SiNx/ SiOx as gate insulator, with IGZO films deposited at room-temperature by RF magnetron sputtering method as active layer. Compared with TFT with SiOx as gate insulator, The saturation mobility...

  • Thin films: Theory leads the way to new devices. Ramesh, Ramamoorthy // Nature Nanotechnology;Jan2008, Vol. 3 Issue 1, p7 

    The article discusses research on a novel way of generating a capacitor that can store electron spin by applying an electric field to a conventional capacitor. It references a study by Massimiliano Stengel, Nicola Spaldin and James Rondinelli in this same issue of "Nature Nanotechnology." The...

  • Structural studies of high-Ku metastable CoPt thin films with long-range order. Yuan, Fu-Te; Hsu, Jen-Hwa; Lin, Yi-Hung; Hsiao, S. N.; Lee, H. Y. // Journal of Applied Physics;Apr2012, Vol. 111 Issue 7, p07A303 

    The symmetries of CoPt thin films in different phases, including disordered A1, ordered L11, and L10 were examined by making measurements along the (10.1) diffraction rod. The films were deposited by sputtering on MgO(111) substrates at different temperatures (Ta). The stacking sequence of...

  • Origin of room temperature ferromagnetic moment in Rh-rich [Rh/Fe] multilayer thin films. Kande, Dhishan; Laughlin, David; Jian-Gang Zhu // Journal of Applied Physics;May2010, Vol. 107 Issue 9, p09E318-1 

    B2 ordered FeRh thin films switch from antiferromagnetic (AFM) to ferromagnetic (FM) state on heating above 350 K and switch back on cooling, with a hysteresis. This property makes FeRh a very attractive choice as a write-assist layer material for low temperature heat assisted magnetic recording...

  • Structural and tribological characterization of Ti–In–N films deposited by magnetron sputter deposition. Nowicki, Margaret A.; Krzanowski, James E.; Endrino, Jose L. // Journal of Materials Research;2012, Vol. 27 Issue 5, p850 

    TiN–indium composite films were deposited by simultaneous sputtering of titanium and indium in a mixed Argon/Nitrogen atmosphere and characterized for tribological applications. Film compositions showed a nonlinear behavior as a function of sputter gun power. For films deposited at...

  • Light absorption and electrical transport in Si:O alloys for photovoltaics. Mirabella, S.; Di Martino, G.; Crupi, I.; Gibilisco, S.; Miritello, M.; Lo Savio, R.; Di Stefano, M. A.; Di Marco, S.; Simone, F.; Priolo, F. // Journal of Applied Physics;Nov2010, Vol. 108 Issue 9, p093507 

    Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics