Epitaxial growth of (001)-oriented Ba0.5Sr0.5TiO3 thin films on a-plane sapphire with an MgO/ZnO bridge layer

Bo Xiao; Hongrui Liu; Avrutin, Vitaliy; Leach, Jacob H.; Rowe, Emmanuel; Huiyong Liu; Özgür, Ümit; Morkoç, Hadis; Chang, W.; Alldredge, L. M. B.; Kirchoefer, S. W.; Pond, J. M.
November 2009
Applied Physics Letters;11/23/2009, Vol. 95 Issue 21, p212901
Academic Journal
High quality (001)-oriented Ba0.5Sr0.5TiO3 (BST) thin films have been grown on a-plane sapphire (1120) by rf magnetron sputtering using a double bridge layer consisting of (0001)-oriented ZnO (50 nm) and (001)-oriented MgO (10 nm) prepared by plasma-assisted molecular beam epitaxy. X-ray diffraction revealed the formation of three sets of in-plane BST domains, offset from one another by 30°, which is consistent with the in-plane symmetry of the MgO layer observed by in situ reflective high electron energy diffraction. The in-plane epitaxial relationship of BST, MgO, and ZnO has been determined to be BST [110]//MgO [110]//ZnO [1120] and BST [110]/MgO [110]//ZnO [1100]. Capacitance-voltage measurements performed on BST coplanar interdigitated capacitor structures revealed a high dielectric tunability of up to 84% at 1 MHz.


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