Ultrafast carrier mobilities in high-resistivity iron-doped Ga0.69In0.31As photoconducting antennas

Sengupta, Suranjana; Wilke, Ingrid; Dutta, Partha. S.
November 2009
Applied Physics Letters;11/23/2009, Vol. 95 Issue 21, p211102
Academic Journal
We report measurements of terahertz (THz) frequency radiation pulses emitted by photoconducting (PC) antennas fabricated from high-resistivity Fe-doped Ga0.69In0.31As. The Ga0.69In0.31As:Fe was grown using a hybrid vertical Bridgman and gradient freezing directional solidification process. GaxIn1-xAs crystals were uniformly doped with Fe atoms to obtain high-resistivity (∼107 Ω cm). The ultrafast carrier mobility in this material is about three orders of magnitude higher than in GaxIn1-xAs thin films grown by molecular beam epitaxy. The bandgap of Ga0.69In0.31As:Fe is low enough (∼1 eV) to use compact Yb-based multiwatt lasers operating at 1.1 μm for photoexcitation of Ga0.69In0.31As based PC antennas for high power THz emission.


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