TITLE

Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes

AUTHOR(S)
Lo, M.-H.; Tu, P.-M.; Wang, C.-H.; Cheng, Y.-J.; Hung, C.-W.; Hsu, S.-C.; Kuo, H.-C.; Zan, H.-W.; Wang, S.-C.; Chang, C.-Y.; Liu, C.-M.
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/23/2009, Vol. 95 Issue 21, p211103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A defect selective passivation method to block the propagation of threading dislocations in GaN epitaxial growth is demonstrated. The defect selective passivation is done by using defect selective chemical etching to locate defect sites, followed by silicon oxide passivation of the etched pits, and epitaxial over growth. The threading dislocation density in the regrown epilayer is significantly improved from 1×109 to 4×107 cm-2. The defect passivated epiwafer is used to grow light emitting diode and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.
ACCESSION #
45478132

 

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