TITLE

Investigation on GaAs surface treated with dimethylaluminumhydride

AUTHOR(S)
Hong-Liang Lu; Xiao-Liang Wang; Sugiyama, Masakazu; Shimogaki, Yukihiro
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/23/2009, Vol. 95 Issue 21, p212102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The reduction and removal of surface native oxides from as-degreased and HCl-treated GaAs substrates using dimethylaluminumhydride (DMAH) have been studied by x-ray photoelectron spectroscopy. It is revealed that higher oxide states are more easily removed from the GaAs surface after exposure to DMAH at 300 °C. Complete consumption of native oxides on HCl-treated GaAs surface has been realized with 10 s DMAH exposure. In addition, the metallization of the Al–O bonding with increase of DMAH exposure confirms the reduction of native oxides on GaAs.
ACCESSION #
45478123

 

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