TITLE

Interfacial layer dependence on device property of high-κ TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness

AUTHOR(S)
Chen, W. B.; Chin, Albert
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/23/2009, Vol. 95 Issue 21, p212105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the device property dependence of high dielectric-constant (high-κ) TiLaO epitaxial-Ge/Si n-type metal-oxide-semiconductor (n-MOS) capacitors on different GeO2 and SiO2 interfacial layers. Large capacitance density of 3.3 μF/cm2, small equivalent-oxide thickness (EOT) of 0.81 nm and small C-V hysteresis of 19 mV are obtained simultaneously for MOS capacitor using ultrathin SiO2 interfacial layer, while the device with ultrathin interfacial GeO2 shows inferior performance of larger 1.1 nm EOT and poor C-V hysteresis of 93 mV. From cross-sectional transmission electron microscopy, secondary ion mass spectroscopy, and x-ray photoelectron spectroscopy analysis, the degraded device performance using GeO2 interfacial layer is due to the severe Ge outdiffusion, thinned interfacial GeO2 and thicker gate dielectric after 550 °C rapid-thermal anneal.
ACCESSION #
45478120

 

Related Articles

  • Thermally Stable MoXSiYNZ as a Metal Gate Electrode for Advanced CMOS Devices. Zhao, P.; Kim, J.; Kim, M. J.; Gnade, B. E.; Wallace, R. M. // AIP Conference Proceedings;2005, Vol. 788 Issue 1, p152 

    The effects of nitrogen content and post annealing on the effective work function of reactively sputtered MoXSiYNZ (Y>X; Z=1-(Y+X)) as metal gate electrodes are investigated. Our physical characterization results, including Rutherford Backscattering Spectrometry (RBS) and High-Resolution...

  • Direct structural evidence of the change in N-III bonding in (GaIn)(NAs) before and after thermal annealing. Volz, K.; Torunski, T.; Rubel, O.; Stolz, W. // Journal of Applied Physics;Sep2008, Vol. 104 Issue 5, p053504 

    The blueshift of the fundamental energy gap of (GaIn)(NAs) upon thermal treatment is well established. However, the physical reason is still controversially discussed in literature. In the present paper we give direct structural evidence using transmission electron microscopy in combination with...

  • Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers. Hu, Yan-Ling; Krämer, Stephan; Fini, Paul T.; Speck, James S. // Applied Physics Letters;9/10/2012, Vol. 101 Issue 11, p112102 

    In this study, a-plane GaN was grown on r-plane sapphire by sidewall lateral epitaxial overgrowth. Prismatic stacking faults (PSFs) in the window region of the GaN layer were identified to have an atomic configuration similar to the model presented by Northrup [Appl. Phys. Lett. 72, 2316...

  • Charging characteristics of Au nanocrystals embedded in metal-oxide-semiconductor structures. Chen-Chan Wang; Jiun-Yi Tseng; Tai-Bor Wu; Lin-Jung Wu; Chun-Sheng Liang; Jenn-Ming Wu // Journal of Applied Physics;1/15/2006, Vol. 99 Issue 2, p026102 

    The charging characteristics of metal-oxide-semiconductor (p-type) structures containing Au nanocrystals in SiO2 gate oxide were studied. The Au nanocrystals of 2–3 nm in diameter are self-assembled from the agglomeration of an ultrathin Au layer embedded in SiO2 matrix by annealing at...

  • Uniaxial strain relaxation in He+ ion implanted (110) oriented SiGe layers. Minamisawa, R. A.; Buca, D.; Trinkaus, H.; Holländer, B.; Mantl, S.; Destefanis, V.; Hartmann, J. M. // Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p034102 

    Uniaxially strained (011)Si is attractive for high performance p-channel metal oxide semiconductor field effect transistor devices due to the predicted high hole mobilities. Here, we demonstrate the realization of purely uniaxially relaxed (011) SiGe virtual substrates by He+ ion implantation...

  • Fabrication of silicon-on-SiO2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects. Zengfeng Di; Chu, Paul K.; Ming Zhu; Fu, Ricky K. Y.; Suhua Luo; Lin Shao; Nastasi, M.; Peng Chen; Alford, T. L.; Mayer, J. W.; Miao Zhang; Liu, Weili; Zhitang Song; Chenglu Lin // Applied Physics Letters;4/3/2006, Vol. 88 Issue 14, p142108 

    A diamondlike-carbon (DLC) layer was used to substitute for the buried SiO2 layer in silicon on insulator (SOI) to mitigate the self-heating effects in our previous study. However, we discovered drawbacks associated with the inferior Si/DLC interface, inadequate thermal stability as well as...

  • Size-induced stability and structural transition in monodispersed indium nanoparticles. Balamurugan, B.; Kruis, F. E.; Shivaprasad, S. M.; Dmitrieva, O.; Zähres, H. // Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p083102 

    The present study reports the stability and the physical significance of the size-induced crystallographic structural transition in the gas-phase synthesized monodispersed indium nanoparticles. Transmission electron microscopy and x-ray photoelectron spectroscopy studies reveal that the...

  • Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAs. Dalapati, Goutam Kumar; Sridhara, Aaditya; Wong, Andrew See Weng; Chia, Ching Kean; Lee, Sung Joo; Chi, Dongzhi // Journal of Applied Physics;Feb2008, Vol. 103 Issue 3, p034508 

    Structural and electrical characteristics of sputtered TiO2 gate dielectric on p-GaAs substrates have been investigated. It has been demonstrated that the introduction of thin aluminum oxynitride (AlON) layer between TiO2 and p-GaAs improves the interface quality. X-ray photoelectron...

  • An investigation into ultra-thin pseudobinary oxide (TiO2)x(Al2O3)1-x films as high- k gate dielectrics. Lei Shi; Jiang Yin; Kuibo Yin; Feng Gao; Yidong Xia; Zhiguo Liu // Applied Physics A: Materials Science & Processing;Feb2008, Vol. 90 Issue 2, p379 

    As potential gate dielectric materials, pseudobinary oxide (TiO2)x(Al2O3)1-x (0.1≤x≤0.6) films (TAO) were deposited on Si (100) substrates by pulsed-laser deposition method and studied systematically via various measurements. By a special deposition process, including two separate...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics