TITLE

Recombination mechanisms in highly efficient thin film Zn(S,O)/Cu(In,Ga)S2 based solar cells

AUTHOR(S)
Merdes, S.; Sáez-Araoz, R.; Ennaoui, A.; Klaer, J.; Lux-Steiner, M. Ch.; Klenk, R.
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/23/2009, Vol. 95 Issue 21, p213502
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Progress in fabricating Cu(In,Ga)S2 based solar cells with Zn(S,O) buffer is presented. An efficiency of 12.9% was achieved. Using spectral response, current-voltage and temperature dependent current-voltage measurements, current transport in this junction was studied and compared to that of a highly efficient CdS/Cu(In,Ga)S2 solar cell with a special focus on recombination mechanisms. Independently of the buffer type and despite the difference in band alignment of the two junctions, interface recombination is found to be the main recombination channel in both cases. This was unexpected since it is generally assumed that a cliff facilitates interface recombination while a spike suppresses it.
ACCESSION #
45478113

 

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