Electrically driven ultraviolet lasing behavior from phosphorus-doped p-ZnO nanonail array/n-Si heterojunction

Jun-Yan Zhang; Qi-Feng Zhang; Tian-Song Deng; Jin-Lei Wu
November 2009
Applied Physics Letters;11/23/2009, Vol. 95 Issue 21, p211107
Academic Journal
Electrically driven ultraviolet lasing behavior from p-ZnO:P nanonail array/n-Si heterojunction was demonstrated. Phosphorus-doped ZnO nanonail arrays were grown by chemical vapor deposition method. The constructed heterojunction with indium tin oxide films as the contacted electrodes demonstrated clear rectifying behavior, and the turn-on voltage was about 2.5 V. The p-n junction lowered the excitation threshold effectively and the electrically driven ultraviolet lasing behavior exhibited high monochromaticity: when the applied forward current reached 24 mA, distinct ultraviolet laser emission peaks were obtained at room temperature, and the full width at half maxims were 0.7, 0.9, and 0.5 nm, respectively. The three sharp peaks represented different lasing modes.


Related Articles

  • Nonpolar a-plane p-type GaN and p-n Junction Diodes. Chakraborty, Arpan; Xing, H.; Craven, M. D.; Keller, S.; Mates, T.; Speck, J. S.; DenBaars, S. P.; Mishra, U. K. // Journal of Applied Physics;10/15/2004, Vol. 96 Issue 8, p4494 

    Growth and electrical characteristics of Mg-doped p-type nonpolar (1120) a-plane GaN films, grown on (1102) r-plane sapphire substrates via metalorganic chemical vapor deposition, were investigated as a function of growth rate, the ammonia to trimethylgallium flow ratio (V/III ratio), and the...

  • Polarization of III-nitride blue and ultraviolet light-emitting diodes. Shakya, J.; Knabe, K.; Kim, K. H.; Li, J.; Lin, J. Y.; Jiang, H. X. // Applied Physics Letters;2/28/2005, Vol. 86 Issue 9, p091107 

    Polarization-resolved electroluminescence studies of III-nitride blue and ultraviolet (UV) light-emitting diodes (LEDs) were performed. The LEDs were fabricated on nitride materials grown by metalorganic chemical vapor deposition on sapphire substrates (0001). Transverse electric (TE)...

  • Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration. de Sio, A.; Achard, J.; Tallaire, A.; Sussmann, R. S.; Collins, A. T.; Silva, F.; Pace, E. // Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p213504 

    Diamond has been identified as a very promising material for X and ultraviolet sensing. In this Letter, a photoconductive device based on a freestanding homoepitaxial chemically vapor deposition (CVD) single-crystal diamond 500 μm thick has been tested. Photoconductive measurements in...

  • Facile fabrication of a ultraviolet tunable MoS2/p-Si junction diode. Serrano, William; Pinto, Nicholas J.; Naylor, Carl H.; Kybert, Nicholas J.; Johnson Jr., A. T. Charlie // Applied Physics Letters;5/11/2015, Vol. 106 Issue 19, p1 

    Chemical vapor deposition grown MoS2 single crystals were transferred onto the edge of a p-Si/SiO2 wafer, forming an abrupt heterogeneous junction diode at the MoS2/p-Si interface. When electrically characterized as a field effect transistor, MoS2 exhibits an n-type response and can be doped in...

  • Experimental CVD synthetic diamonds from LIMHP. Lefèvre, Pierre; Chalain, Jean-Pierre // Gems & Gemology;Summer2008, Vol. 44 Issue 2, p185 

    The article offers a description of a experimental synthetic diamonds examined at the Swiss Gemological Institute (SSEF) in Switzerland. The synthetic diamonds were produced by chemical vapor deposition (CVD) at the Laboratoire d'Ingéniere des Matériaux et des Hautes Pressions (LIMHP) in...

  • Growth of high optical and electrical quality GaN layers using low-pressure metalorganic... Khan, M. Asif; Kuznia, J.N.; Van Hove, J.M.; Olson, D.T.; Krishnankutty, S.; Kolbas, R.M. // Applied Physics Letters;2/4/1991, Vol. 58 Issue 5, p526 

    Studies the growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition. Optimization of growth conditions; Deposition over basal plane sapphire substrates.

  • CVD chamber cleaning. Johnson, Andrew D.; Entley, William R.; Maroulis, Peter J. // Solid State Technology;Dec2000, Vol. 43 Issue 12, p103 

    Focuses on the reduction of perfluorocompound (PFC) emissions from cleaning of chemical vapor deposition (CVD) chambers. Analysis of the environmental impact of PFC; Measurement of the concentration of PFC during CVD chamber cleaning; Process chemistry for CVD chamber cleaning.

  • In situ, real-time observation of Al chemical-vapor deposition on SiO2 in an environmental transmission electron microscope. Drucker, Jeff; Sharma, Renu; Weiss, Karl; Kouvetakis, John // Journal of Applied Physics;12/15/1994, Vol. 76 Issue 12, p8198 

    Presents information on a study which demonstrated a technique for in situ observation of chemical vapor deposition. Demonstration of the sensitivity to both microstructural and profile evaluation at the nanometer scale; Discussion of surface pretreatment by TiCl[sub4]; Estimation of local...

  • A 3-dimensional model for low-pressure chemical-vapor-deposition step coverage in trenches and circular vias. IslamRaja, M. Mazhar; Cappelli, M. A.; McVittie, J. P.; Saraswat, K. C. // Journal of Applied Physics;12/1/1991, Vol. 70 Issue 11, p7137 

    Presents a study that developed a three-dimensional model for low-pressure chemical-vapor-deposition step coverage in trenches and circular vias. Derivation of the basic equations; Method; Results and discussion; Conclusion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics