Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors

Ghoneim, H.; Knoch, J.; Riel, H.; Webb, D.; Björk, M. T.; Karg, S.; Lörtscher, E.; Schmid, H.; Riess, W.
November 2009
Applied Physics Letters;11/23/2009, Vol. 95 Issue 21, p213504
Academic Journal
We present a study on suppressing the ambipolar behavior of Schottky barrier metal-oxide-semiconductor field-effect transistors (MOSFET). Inserting a silicon nitride layer of appropriate thickness between the metallic source/drain electrodes and the silicon yields a low Schottky-barrier and simultaneously tunes the properties of the contact from metal-semiconductor-like to the behavior of a doped contact. Moreover, device characteristics of pseudo-MOSFETs reveal an efficient suppression of ambipolar behavior. Comparison with an alternative way of achieving low Schottky-barrier contacts, i.e., by inserting a strong dipole layer such as LiF between the metal and the silicon, reveals that the suppression is not a result of shifting the Fermi level closer to the conduction band but is caused by a reduction of metal-induced gap states. The trade-off between suppression of the ambipolar behavior, contact length and on-state current is investigated with simulations.


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