Surface transformation and inversion domain boundaries in gallium nitride nanorods

Pan Xiao; Xu Wang; Jun Wang; Fujiu Ke; Min Zhou; Yilong Bai
November 2009
Applied Physics Letters;11/23/2009, Vol. 95 Issue 21, p211907
Academic Journal
Phase transformation and subdomain structure in [0001]-oriented gallium nitride (GaN) nanorods of different sizes are studied using molecular dynamics simulations. The analysis concerns the structure of GaN nanorods at 300 K without external loading. Calculations show that a transformation from wurtzite to a tetragonal structure occurs along [formula] lateral surfaces, leading to the formation of a six-sided columnar inversion domain boundary (IDB) in the [0001] direction of the nanorods. This structural configuration is similar to the IDB structure observed experimentally in GaN epitaxial layers. The transformation is significantly dependent on the size of the nanorods.


Related Articles

  • Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition. Lee, S. C.; Youngblood, N.; Jiang, Y. B.; Peterson, E. J.; Stark, C. J. M.; Detchprohm, T.; Wetzel, C.; Brueck, S. R. J. // Applied Physics Letters;12/7/2015, Vol. 107 Issue 23, p1 

    The incorporation of In on the non-polar, piezoelectric-free (001) facet of cubic (c-) GaN epitaxially grown over a Si(001) substrate by metal-organic vapor phase epitaxy is reported. Relying on a hexagonal (h-) to c-phase transformation during epitaxy on an 800 nm-wide, Si(111)-faceted v-groove...

  • Strain dependence of thermal conductivity of [0001]-oriented GaN nanowires. Jung, Kwangsub; Cho, Maenghyo; Zhou, Min // Applied Physics Letters;1/24/2011, Vol. 98 Issue 4, p041909 

    The thermomechanical behavior of [0001]-oriented GaN nanowires with 2.26 and 3.55 nm in diameter under tensile loading is analyzed using molecular dynamics simulations with the Green-Kubo method and quantum correction. A phase transformation from wurtzite to a tetragonal structure is observed....

  • A theoretical study on various models for the domain boundaries in epitaxial GaN films. Wang, S.Q.; Wang, Y.M.; Ye, H.Q. // Applied Physics A: Materials Science & Processing;2000, Vol. 70 Issue 4, p475 

    Abstract. Various domain boundaries that are found in epitaxial Wurtzite GaN films were studied by molecular dynamics simulation. The Ewald summation algorithm and Keating potential model are adopted to calculate the long-range Coulomb interaction and the short-range bonding force in the...

  • Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics. Kim, Wook; Aktas, Ö.; Botchkarev, A. E.; Salvador, A.; Mohammad, S. N.; Morkoç, H. // Journal of Applied Physics;5/15/1996, Vol. 79 Issue 10, p7657 

    Focuses on a study which described the materials characteristics and growth kinetics of a GaN layer growth prepared by reactive molecular beam epitaxy. Methodology; Results; Discussion.

  • Synthesis of GaN by N ion implantation in GaAs (001). Lin, X.W.; Behar, M.; Maltez, R.; Swider, W.; Liliental-Weber, Z.; Washburn, J. // Applied Physics Letters;10/30/1995, Vol. 67 Issue 18, p2699 

    Synthesizes the hexagonal and cubic gallium nitride phases in gallium arsenide. Crystallization of the cubic GaN; Observation of the cubic-to-hexagonal GaN phase transition; Precipitation of cubic GaN in the GaAs matrix.

  • Measurement of phonon-exciton dephasing rate in GaN on sapphire by degenerate four-wave mixing. Pau, S.; Kuhl, J.; Scholz, F.; Haerle, V.; Khan, M. A.; Sun, C. J. // Applied Physics Letters;2/2/1998, Vol. 72 Issue 5 

    The density and temperature dependence of the exciton dephasing time of two hexagonal GaN films on sapphire is measured using degenerate four-wave mixing (DFWM). The residual 4 ps dephasing time at low temperature and density is caused by exciton-impurity scattering. We present a theory of DFWM...

  • Thermal and mechanical response of [0001]-oriented GaN nanowires during tensile loading and unloading. Jung, Kwangsub; Cho, Maenghyo; Zhou, Min // Journal of Applied Physics;Oct2012, Vol. 112 Issue 8, p083522 

    Molecular dynamics simulations are carried out to investigate the thermal and mechanical responses of GaN nanowires with the [0001] orientation and hexagonal cross sections to tensile loading and unloading. The thermal conductivity of the nanowires at each deformed state is calculated using the...

  • On a new type of sublattice tipping in noncollinear antiferromagnets. Marchenko, V. I.; Tikhonov, A. M. // JETP Letters;12/10/98, Vol. 68 Issue 11, p887 

    An explanation is offered for the 30° tipping of sublattices which has been observed in the noncollinear antiferromagnet CsMnI[sub 3]. In contrast to the ordinary 90° spin flop, this phase transition is due to nonlinear and relativistic corrections to the susceptibility. © 1998 American...

  • Domain nucleation in thermomagnetic memory systems near the Curie point. Khodenkov, G. E. // Technical Physics Letters;Aug98, Vol. 24 Issue 8, p628 

    The approximation of Landau second-order phase transitions for ferromagnetics near the Curie point is used for a numerical determination of the two-dimensional microstructure which forms the basis of a data-storage domain. This structure and its lower level of the spectrum of small oscillations...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics