TITLE

Electric field control of magnetoresistance in a lateral InAs quantum well spin valve

AUTHOR(S)
Hyun Kum; Basu, Debashish; Bhattacharya, Pallab; Wei Guo
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/23/2009, Vol. 95 Issue 21, p212503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The control of magnetoresistance of a lateral spin valve with bias applied to a gate placed outside the channel region is demonstrated. The spin valve channel consists of an InAs/In0.53Ga0.47As/In0.52Al0.48As two-dimensional electron gas lattice matched to (001) InP. The polarizer and analyzer contacts are made with 35 nm type B MnAs/In0.52Al0.48As Schottky tunnel barriers. The magnetoresistance changes from 0.14% to 4% at 10 K in a device in which the spin transport is in the direction of magnetization of the polarizer and analyzer contacts. The effect is absent in a GaAs channel spin valve and other control devices indicating that the change in magnetoresistance is due to Rashba spin-orbit coupling.
ACCESSION #
45478095

 

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