Electric field control of magnetoresistance in a lateral InAs quantum well spin valve

Hyun Kum; Basu, Debashish; Bhattacharya, Pallab; Wei Guo
November 2009
Applied Physics Letters;11/23/2009, Vol. 95 Issue 21, p212503
Academic Journal
The control of magnetoresistance of a lateral spin valve with bias applied to a gate placed outside the channel region is demonstrated. The spin valve channel consists of an InAs/In0.53Ga0.47As/In0.52Al0.48As two-dimensional electron gas lattice matched to (001) InP. The polarizer and analyzer contacts are made with 35 nm type B MnAs/In0.52Al0.48As Schottky tunnel barriers. The magnetoresistance changes from 0.14% to 4% at 10 K in a device in which the spin transport is in the direction of magnetization of the polarizer and analyzer contacts. The effect is absent in a GaAs channel spin valve and other control devices indicating that the change in magnetoresistance is due to Rashba spin-orbit coupling.


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