TITLE

Analog memory capacitor based on field-configurable ion-doped polymers

AUTHOR(S)
Qianxi Lai; Lei Zhang; Zhiyong Li; Stickle, William F.; Williams, R. Stanley; Yong Chen
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/23/2009, Vol. 95 Issue 21, p213503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A memory capacitor based on a field-configurable ion-doped polymer is reported. The device can be dynamically and reversibly programed to analog capacitances with low-voltage (<5 V) pulses. After the device is programed to a specific value, its capacitance remains nonvolatile. The field-configurable capacitance is attributed to the modification of ionic dopant concentrations in the polymer. The memory capacitors might be used for analog memory, nonlinear analog, and neuromorphic circuits.
ACCESSION #
45478087

 

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