The effects of processing of high-electron-mobility transistors on the strain state and the electrical properties of AlGaN/GaN structures

González-Posada Flores, F.; Rivera, C.; Muñoz, E.
November 2009
Applied Physics Letters;11/16/2009, Vol. 95 Issue 20, p203504
Academic Journal
The results of x-ray characterization presented in this work show that the strain state of the AlGaN and GaN layers is modified by the Ohmic contact deposition and subsequent annealing, as well as by the SiN passivation. In both cases, the tensile strain for the AlGaN layer decreases whereas the residual compressive strain in the GaN layer is consistently increased in the free-contact area. However, we show that the difference in the chemical composition of the surface is the main factor explaining the reduction of channel carrier concentration observed in capacitance-voltage measurements, with a variation as large as ∼2×1012 cm-2.


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