Randomly packed n-SnO2 nanorods/p-SiC heterojunction light-emitting diodes

Yang, H. Y.; Yu, S. F.; Cheng, C. W.; Tsang, S. H.; Liang, H. K.; Fan, H. J.
November 2009
Applied Physics Letters;11/16/2009, Vol. 95 Issue 20, p201104
Academic Journal
A layer of randomly packed n-SnO2 nanorods is grown by vapor transport method on the p-SiC(4H) substrate to realize heterojunction light-emitting diodes. Diodelike rectifying current-voltage characteristics, with a turn-on voltage of ∼4.5 V and reverse leakage current density of <0.25 A/m2, are obtained at room temperature. Furthermore, electroluminescent spectra with emission peaks at around 395, 434, and 497 nm are observed from the heterojunction under forward bias. This is due to the relaxation of electrons in the conduction band of SnO2 to the surface defect states and subsequent radiative recombination with holes injected from the p-SiC substrate.


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